Details
| Original language | English |
|---|---|
| Article number | 045701 |
| Journal | Journal of applied physics |
| Volume | 128 |
| Issue number | 4 |
| Publication status | Published - 28 Jul 2020 |
| Externally published | Yes |
Abstract
We report on a simple method for the characterization of optical absorption in semiconductors at photon energies below the bandgap energy. Therefore, we perform spatially resolved and intensity dependent deflection spectroscopy to measure the local optical absorption. To separate the absorption mechanisms, we take advantage of different intensity scaling of these mechanisms and extract the material parameters by fitting intensity dependent absorption to a physical model. This model takes into account relevant optical absorption processes like linear absorption from defect states, two-photon absorption, and the Franz-Keldysh effect. The method is exemplarily carried out for GaAs, Si, and CdTe. The literature values of the two-photon absorption coefficient are reproduced and the strength of the Franz-Keldysh effect in CdTe is determined for the first time as C FK = [8.7, ., 16.9] × 10 13 m - 1 s - 1 / 2.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 128, No. 4, 045701, 28.07.2020.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Intensity dependent deflection spectroscopy for the characterization of absorption mechanisms in semiconductors
AU - Dickmann, Walter
AU - Götze, Tom
AU - Bieler, Mark
AU - Kroker, Stefanie
N1 - Funding information: The authors gratefully acknowledge support from the Braunschweig International Graduate School of Metrology B-IGSM and the DFG Research Training Group GrK1952/1 “Metrology for Complex Nanosystems.” S.K. also acknowledges partial support from the German Research Foundation (Deutsche Forschungsgemeinschaft, DFG) under Germany’s Excellence Strategy EXC-2123 QuantumFrontiers—390837967.
PY - 2020/7/28
Y1 - 2020/7/28
N2 - We report on a simple method for the characterization of optical absorption in semiconductors at photon energies below the bandgap energy. Therefore, we perform spatially resolved and intensity dependent deflection spectroscopy to measure the local optical absorption. To separate the absorption mechanisms, we take advantage of different intensity scaling of these mechanisms and extract the material parameters by fitting intensity dependent absorption to a physical model. This model takes into account relevant optical absorption processes like linear absorption from defect states, two-photon absorption, and the Franz-Keldysh effect. The method is exemplarily carried out for GaAs, Si, and CdTe. The literature values of the two-photon absorption coefficient are reproduced and the strength of the Franz-Keldysh effect in CdTe is determined for the first time as C FK = [8.7, ., 16.9] × 10 13 m - 1 s - 1 / 2.
AB - We report on a simple method for the characterization of optical absorption in semiconductors at photon energies below the bandgap energy. Therefore, we perform spatially resolved and intensity dependent deflection spectroscopy to measure the local optical absorption. To separate the absorption mechanisms, we take advantage of different intensity scaling of these mechanisms and extract the material parameters by fitting intensity dependent absorption to a physical model. This model takes into account relevant optical absorption processes like linear absorption from defect states, two-photon absorption, and the Franz-Keldysh effect. The method is exemplarily carried out for GaAs, Si, and CdTe. The literature values of the two-photon absorption coefficient are reproduced and the strength of the Franz-Keldysh effect in CdTe is determined for the first time as C FK = [8.7, ., 16.9] × 10 13 m - 1 s - 1 / 2.
UR - http://www.scopus.com/inward/record.url?scp=85094201735&partnerID=8YFLogxK
U2 - 10.1063/5.0012702
DO - 10.1063/5.0012702
M3 - Article
AN - SCOPUS:85094201735
VL - 128
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 4
M1 - 045701
ER -