Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Authors

  • A. Laha
  • A. Fissel
  • E. Bugiel
  • M. Badylevich
  • V. Afanasiev
  • H. J. Osten

Research Organisations

External Research Organisations

  • KU Leuven
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Details

Original languageEnglish
Title of host publicationProceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices
Subtitle of host publicationCOMMAD'08
Pages166-169
Number of pages4
Publication statusPublished - 2008
Event2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - Sydney, NSW, Australia
Duration: 28 Jul 2008 → 1 Aug 2008

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Abstract

Si quantum dots (QD) embedded into Gd2O3 and Si quantum wells (QW) with epitaxial Gd2O3 as the barrier layers were grown on Si substrates. With decreasing dot size down to the 2-nm range, the optical absorption exhibits a spectacular shift in spectral threshold upto 2.9±0.1 eV, as compared to the 1.12 eV absorption edge of the bulk Si crystal. Such shift suggests a significant influence of quantum confinement on the nanocrystal/oxide interface band diagram; the effect of which was observed to be predominantly caused by the upshift of the nanocrystal conduction band. Also, the Pt/Gd2O3/Si MOS capacitors comprised with Si nanoclusters display large hysteresis (∼1.5-2V) in capacitance-voltage measurements making them potential candidate of nonvolatile memory devices.

Keywords

    MBE, Si-QD, Solar cells

ASJC Scopus subject areas

Cite this

Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application. / Laha, A.; Fissel, A.; Bugiel, E. et al.
Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD'08. 2008. p. 166-169 4802118 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Laha, A, Fissel, A, Bugiel, E, Badylevich, M, Afanasiev, V & Osten, HJ 2008, Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application. in Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD'08., 4802118, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 166-169, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08, Sydney, NSW, Australia, 28 Jul 2008. https://doi.org/10.1109/COMMAD.2008.4802118
Laha, A., Fissel, A., Bugiel, E., Badylevich, M., Afanasiev, V., & Osten, H. J. (2008). Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application. In Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD'08 (pp. 166-169). Article 4802118 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2008.4802118
Laha A, Fissel A, Bugiel E, Badylevich M, Afanasiev V, Osten HJ. Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application. In Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD'08. 2008. p. 166-169. 4802118. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2008.4802118
Laha, A. ; Fissel, A. ; Bugiel, E. et al. / Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application. Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD'08. 2008. pp. 166-169 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).
Download
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abstract = "Si quantum dots (QD) embedded into Gd2O3 and Si quantum wells (QW) with epitaxial Gd2O3 as the barrier layers were grown on Si substrates. With decreasing dot size down to the 2-nm range, the optical absorption exhibits a spectacular shift in spectral threshold upto 2.9±0.1 eV, as compared to the 1.12 eV absorption edge of the bulk Si crystal. Such shift suggests a significant influence of quantum confinement on the nanocrystal/oxide interface band diagram; the effect of which was observed to be predominantly caused by the upshift of the nanocrystal conduction band. Also, the Pt/Gd2O3/Si MOS capacitors comprised with Si nanoclusters display large hysteresis (∼1.5-2V) in capacitance-voltage measurements making them potential candidate of nonvolatile memory devices.",
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AU - Laha, A.

AU - Fissel, A.

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AU - Badylevich, M.

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