Details
| Original language | English |
|---|---|
| Pages (from-to) | 283-286 |
| Number of pages | 4 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 185 |
| Early online date | 29 May 2018 |
| Publication status | Published - Oct 2018 |
Abstract
We examine the regeneration kinetics of passivated emitter and rear solar cells (PERCs) fabricated on boron-doped p-type Czochralski-grown silicon wafers in darkness by electron injection via application of a forward bias voltage at elevated temperature (140 °C) in order to discriminate between electronic and photonic effects. Based on these dark regeneration experiments, we address the existing inconsistency regarding the measured linear dependence of the regeneration rate constant on the excess carrier density. Using the method of dark regeneration by current injection into the solar cell, we are able to measure the total recombination current of the solar cell at the actual regeneration temperature under applied voltage, i.e., at the physically relevant regeneration conditions. The direct comparison of the regeneration rate constant as a function of electronically injected carrier concentration in the dark and the regeneration rate constant during illumination clearly shows that the regeneration is a purely electronically stimulated effect and that photons are not directly involved.
Keywords
- Boron-oxygen defect, Czochralski-grown silicon, LID, Regeneration, Solar cell
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Surfaces, Coatings and Films
Sustainable Development Goals
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In: Solar Energy Materials and Solar Cells, Vol. 185, 10.2018, p. 283-286.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - In-situ characterization of electron-assisted regeneration of Cz-Si solar cells
AU - Helmich, L.
AU - Walter, D.C.
AU - Bredemeier, D.
AU - Falster, R.
AU - Voronkov, V.V.
AU - Schmidt, Jan
PY - 2018/10
Y1 - 2018/10
N2 - We examine the regeneration kinetics of passivated emitter and rear solar cells (PERCs) fabricated on boron-doped p-type Czochralski-grown silicon wafers in darkness by electron injection via application of a forward bias voltage at elevated temperature (140 °C) in order to discriminate between electronic and photonic effects. Based on these dark regeneration experiments, we address the existing inconsistency regarding the measured linear dependence of the regeneration rate constant on the excess carrier density. Using the method of dark regeneration by current injection into the solar cell, we are able to measure the total recombination current of the solar cell at the actual regeneration temperature under applied voltage, i.e., at the physically relevant regeneration conditions. The direct comparison of the regeneration rate constant as a function of electronically injected carrier concentration in the dark and the regeneration rate constant during illumination clearly shows that the regeneration is a purely electronically stimulated effect and that photons are not directly involved.
AB - We examine the regeneration kinetics of passivated emitter and rear solar cells (PERCs) fabricated on boron-doped p-type Czochralski-grown silicon wafers in darkness by electron injection via application of a forward bias voltage at elevated temperature (140 °C) in order to discriminate between electronic and photonic effects. Based on these dark regeneration experiments, we address the existing inconsistency regarding the measured linear dependence of the regeneration rate constant on the excess carrier density. Using the method of dark regeneration by current injection into the solar cell, we are able to measure the total recombination current of the solar cell at the actual regeneration temperature under applied voltage, i.e., at the physically relevant regeneration conditions. The direct comparison of the regeneration rate constant as a function of electronically injected carrier concentration in the dark and the regeneration rate constant during illumination clearly shows that the regeneration is a purely electronically stimulated effect and that photons are not directly involved.
KW - Boron-oxygen defect
KW - Czochralski-grown silicon
KW - LID
KW - Regeneration
KW - Solar cell
UR - http://www.scopus.com/inward/record.url?scp=85047429260&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2018.05.023
DO - 10.1016/j.solmat.2018.05.023
M3 - Article
VL - 185
SP - 283
EP - 286
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -