Details
| Original language | English |
|---|---|
| Pages (from-to) | 159-166 |
| Number of pages | 8 |
| Journal | Surface science |
| Volume | 504 |
| Early online date | 20 Jan 2002 |
| Publication status | Published - 20 Apr 2002 |
| Externally published | Yes |
Abstract
Pr2O3 may be an alternative high-K gate dielectric material for silicon integrated circuits, i.e., it has a dielectric constant K≥25 and is currently under consideration as potential replacement for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal-oxide-semiconductor technology. Using scanning tunneling microscopy and X-ray photoelectron spectroscopy, we show that the initial stages of heteroepitaxial Pr2O3 grown on Si(001) consist of a mixed PrO2/Pr2O3 phase. First ab initio calculation results also indicate the formation of an ultra-thin Si-O interlayer between the Si substrate and Pr2O3. In the monolayer range of deposited Pr2O3, Auger electron spectroscopy measurements show that the oxide is completely decomposed above 780 °C.
Keywords
- Ab initio quantum chemical methods and calculations, Auger electron spectroscopy, Growth, Scanning tunneling microscopy, Silicon, X-ray photoelectron spectroscopy
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Materials Chemistry
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In: Surface science, Vol. 504, 20.04.2002, p. 159-166.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Initial stages of praseodymium oxide film formation on Si(001)
AU - Müssig, H. J.
AU - Dabrowski, J.
AU - Ignatovich, K.
AU - Liu, J. P.
AU - Zavodinsky, V.
AU - Osten, H. J.
PY - 2002/4/20
Y1 - 2002/4/20
N2 - Pr2O3 may be an alternative high-K gate dielectric material for silicon integrated circuits, i.e., it has a dielectric constant K≥25 and is currently under consideration as potential replacement for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal-oxide-semiconductor technology. Using scanning tunneling microscopy and X-ray photoelectron spectroscopy, we show that the initial stages of heteroepitaxial Pr2O3 grown on Si(001) consist of a mixed PrO2/Pr2O3 phase. First ab initio calculation results also indicate the formation of an ultra-thin Si-O interlayer between the Si substrate and Pr2O3. In the monolayer range of deposited Pr2O3, Auger electron spectroscopy measurements show that the oxide is completely decomposed above 780 °C.
AB - Pr2O3 may be an alternative high-K gate dielectric material for silicon integrated circuits, i.e., it has a dielectric constant K≥25 and is currently under consideration as potential replacement for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal-oxide-semiconductor technology. Using scanning tunneling microscopy and X-ray photoelectron spectroscopy, we show that the initial stages of heteroepitaxial Pr2O3 grown on Si(001) consist of a mixed PrO2/Pr2O3 phase. First ab initio calculation results also indicate the formation of an ultra-thin Si-O interlayer between the Si substrate and Pr2O3. In the monolayer range of deposited Pr2O3, Auger electron spectroscopy measurements show that the oxide is completely decomposed above 780 °C.
KW - Ab initio quantum chemical methods and calculations
KW - Auger electron spectroscopy
KW - Growth
KW - Scanning tunneling microscopy
KW - Silicon
KW - X-ray photoelectron spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=0037140021&partnerID=8YFLogxK
U2 - 10.1016/S0039-6028(01)01961-6
DO - 10.1016/S0039-6028(01)01961-6
M3 - Article
AN - SCOPUS:0037140021
VL - 504
SP - 159
EP - 166
JO - Surface science
JF - Surface science
SN - 0039-6028
ER -