Details
| Original language | English |
|---|---|
| Pages (from-to) | 87-92 |
| Number of pages | 6 |
| Journal | IEEE International Symposium on Electromagnetic Compatibility |
| Volume | 1 |
| Publication status | Published - 2002 |
| Event | 2002 IEEE International Symposium on Electromagnetic Compatibility - Minneapolis, MN, United States Duration: 19 Aug 2002 → 23 Aug 2002 |
Abstract
The influence of the technology on the destruction effects of semiconductors by impact of EMP and UWB pulses was presented. The susceptibility of electronic devices to a transient electromagnetic field threat was measured. It was found that the CMOS devices first got reversible breakdowns and at much higher field amplitudes non reversible destructions occurred. The breakdown- (BT) and destruction thresholds (DT) were found to decrease much by extending the ribbon cable length or usage of pulses with faster rise times.
Keywords
- CMOS, EMP, Semiconductor, Susceptibility, TTL, UWB
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE International Symposium on Electromagnetic Compatibility, Vol. 1, 2002, p. 87-92.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Influence of the technology on the destruction effects of semiconducters by impact of EMP and UWB pulses
AU - Camp, Michael
AU - Garbe, Heyno
AU - Nitsch, Daniel
PY - 2002
Y1 - 2002
N2 - The influence of the technology on the destruction effects of semiconductors by impact of EMP and UWB pulses was presented. The susceptibility of electronic devices to a transient electromagnetic field threat was measured. It was found that the CMOS devices first got reversible breakdowns and at much higher field amplitudes non reversible destructions occurred. The breakdown- (BT) and destruction thresholds (DT) were found to decrease much by extending the ribbon cable length or usage of pulses with faster rise times.
AB - The influence of the technology on the destruction effects of semiconductors by impact of EMP and UWB pulses was presented. The susceptibility of electronic devices to a transient electromagnetic field threat was measured. It was found that the CMOS devices first got reversible breakdowns and at much higher field amplitudes non reversible destructions occurred. The breakdown- (BT) and destruction thresholds (DT) were found to decrease much by extending the ribbon cable length or usage of pulses with faster rise times.
KW - CMOS
KW - EMP
KW - Semiconductor
KW - Susceptibility
KW - TTL
KW - UWB
UR - http://www.scopus.com/inward/record.url?scp=0036385024&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0036385024
VL - 1
SP - 87
EP - 92
JO - IEEE International Symposium on Electromagnetic Compatibility
JF - IEEE International Symposium on Electromagnetic Compatibility
SN - 0190-1494
T2 - 2002 IEEE International Symposium on Electromagnetic Compatibility
Y2 - 19 August 2002 through 23 August 2002
ER -