Details
| Original language | English |
|---|---|
| Pages (from-to) | 761-764 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 13 |
| Issue number | 2-4 |
| Publication status | Published - Mar 2002 |
Abstract
Self-assembled InAs quantum dots (QDs) grown on AlAs have been embedded in three sample structures for atomic force microscopy (AFM), photoluminescence (PL) and resonant-tunneling measurements. The amount of deposited InAs was varied between nominally 1.6 and 2 monolayers. This leads to a shift of the QD-related PL peak from about 1.9 to 1.6 eV that is due to an increasing QD size as confirmed by AFM images of the reference wafer. With increasing InAs coverage, the onset voltage for single-electron tunneling shifts from 0.3 to 0 V which is explained by the lower lying ground state in the larger QDs. The observed strong dependence of the QD size on the InAs coverage offers up a simple way to adjust the onset voltage for single-electron tunneling via growth parameters.
Keywords
- Atomic force microscopy, Photoluminescence, Resonant tunneling, Self-assembled quantum dots, Single-electron tunneling
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 13, No. 2-4, 03.2002, p. 761-764.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Influence of the size of self-assembled InAs/AlAs quantum dots on photoluminescence and resonant tunneling
AU - Pierz, K.
AU - Ma, Z.
AU - Hapke-Wurst, I.
AU - Keyser, U. F.
AU - Zeitler, U.
AU - Haug, R. J.
N1 - Funding information: This work was supported by the Deutsche Forschungsgemeinschaft DFG (Pi 385/1-1 and Ha 1826/5-1).
PY - 2002/3
Y1 - 2002/3
N2 - Self-assembled InAs quantum dots (QDs) grown on AlAs have been embedded in three sample structures for atomic force microscopy (AFM), photoluminescence (PL) and resonant-tunneling measurements. The amount of deposited InAs was varied between nominally 1.6 and 2 monolayers. This leads to a shift of the QD-related PL peak from about 1.9 to 1.6 eV that is due to an increasing QD size as confirmed by AFM images of the reference wafer. With increasing InAs coverage, the onset voltage for single-electron tunneling shifts from 0.3 to 0 V which is explained by the lower lying ground state in the larger QDs. The observed strong dependence of the QD size on the InAs coverage offers up a simple way to adjust the onset voltage for single-electron tunneling via growth parameters.
AB - Self-assembled InAs quantum dots (QDs) grown on AlAs have been embedded in three sample structures for atomic force microscopy (AFM), photoluminescence (PL) and resonant-tunneling measurements. The amount of deposited InAs was varied between nominally 1.6 and 2 monolayers. This leads to a shift of the QD-related PL peak from about 1.9 to 1.6 eV that is due to an increasing QD size as confirmed by AFM images of the reference wafer. With increasing InAs coverage, the onset voltage for single-electron tunneling shifts from 0.3 to 0 V which is explained by the lower lying ground state in the larger QDs. The observed strong dependence of the QD size on the InAs coverage offers up a simple way to adjust the onset voltage for single-electron tunneling via growth parameters.
KW - Atomic force microscopy
KW - Photoluminescence
KW - Resonant tunneling
KW - Self-assembled quantum dots
KW - Single-electron tunneling
UR - http://www.scopus.com/inward/record.url?scp=0036492822&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(02)00277-1
DO - 10.1016/S1386-9477(02)00277-1
M3 - Article
AN - SCOPUS:0036492822
VL - 13
SP - 761
EP - 764
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 2-4
ER -