Details
| Original language | English |
|---|---|
| Pages (from-to) | 2670-2679 |
| Number of pages | 10 |
| Journal | CHEMPHYSCHEM |
| Volume | 16 |
| Issue number | 12 |
| Early online date | 26 Jun 2015 |
| Publication status | Published - 17 Aug 2015 |
Abstract
The photocatalytic properties of titanium dioxide (TiO 2) layers on different metal plates are investigated. The metal-semiconductor interface can be described as a Schottky contact, and is part of a depletion layer for the majority carriers in the semiconductor. Many researchers have demonstrated an increase in the photocatalytic activity, due to the formation of a metal-semiconductor contact that are obtained by deposition of small metal islands on the semiconductor. Nevertheless, the influence of a Schottky contact remains uncertain, sparking much interest in this field. The immobilization of nanoparticulate TiO 2 layers by dip-coating on different metal substrates results in the formation of a Schottky contact. The recombination rate of photoinduced electron-hole pairs decreases at this interface provided that the thickness of the thin TiO 2 layer has a similar magnitude to the depletion layer. The degradation of dichloroacetic acid in aqueous solution and of acetaldehyde in a gas mixture is investigated to obtain information concerning the influence of the metal work function of the back contact on the efficiency of the photocatalytic process. Green coat: The Schottky contacts at the interface between a semiconductor and a metal might form the basis for the detoxification of environmental pollutants. The photodegradation reaction of acetaldehyde and dichloroacetic acid is used to investigate the relationship between the metal work function and photocatalysis by TiO 2 layers dip-coated onto metal surfaces. A proposed degradation pathway of dichloroacetate at the solid-liquid interface is discussed.
Keywords
- acetaldehyde degradation, dichloroacetic acid degradation, metal-semiconductor interfaces, photocatalysis, titanium dioxide
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Chemistry(all)
- Physical and Theoretical Chemistry
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In: CHEMPHYSCHEM, Vol. 16, No. 12, 17.08.2015, p. 2670-2679.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Influence of the Metal Work Function on the Photocatalytic Properties of TiO2 Layers on Metals
AU - Freitag, J.
AU - Bahnemann, D.W.
N1 - Publisher Copyright: © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2015/8/17
Y1 - 2015/8/17
N2 - The photocatalytic properties of titanium dioxide (TiO 2) layers on different metal plates are investigated. The metal-semiconductor interface can be described as a Schottky contact, and is part of a depletion layer for the majority carriers in the semiconductor. Many researchers have demonstrated an increase in the photocatalytic activity, due to the formation of a metal-semiconductor contact that are obtained by deposition of small metal islands on the semiconductor. Nevertheless, the influence of a Schottky contact remains uncertain, sparking much interest in this field. The immobilization of nanoparticulate TiO 2 layers by dip-coating on different metal substrates results in the formation of a Schottky contact. The recombination rate of photoinduced electron-hole pairs decreases at this interface provided that the thickness of the thin TiO 2 layer has a similar magnitude to the depletion layer. The degradation of dichloroacetic acid in aqueous solution and of acetaldehyde in a gas mixture is investigated to obtain information concerning the influence of the metal work function of the back contact on the efficiency of the photocatalytic process. Green coat: The Schottky contacts at the interface between a semiconductor and a metal might form the basis for the detoxification of environmental pollutants. The photodegradation reaction of acetaldehyde and dichloroacetic acid is used to investigate the relationship between the metal work function and photocatalysis by TiO 2 layers dip-coated onto metal surfaces. A proposed degradation pathway of dichloroacetate at the solid-liquid interface is discussed.
AB - The photocatalytic properties of titanium dioxide (TiO 2) layers on different metal plates are investigated. The metal-semiconductor interface can be described as a Schottky contact, and is part of a depletion layer for the majority carriers in the semiconductor. Many researchers have demonstrated an increase in the photocatalytic activity, due to the formation of a metal-semiconductor contact that are obtained by deposition of small metal islands on the semiconductor. Nevertheless, the influence of a Schottky contact remains uncertain, sparking much interest in this field. The immobilization of nanoparticulate TiO 2 layers by dip-coating on different metal substrates results in the formation of a Schottky contact. The recombination rate of photoinduced electron-hole pairs decreases at this interface provided that the thickness of the thin TiO 2 layer has a similar magnitude to the depletion layer. The degradation of dichloroacetic acid in aqueous solution and of acetaldehyde in a gas mixture is investigated to obtain information concerning the influence of the metal work function of the back contact on the efficiency of the photocatalytic process. Green coat: The Schottky contacts at the interface between a semiconductor and a metal might form the basis for the detoxification of environmental pollutants. The photodegradation reaction of acetaldehyde and dichloroacetic acid is used to investigate the relationship between the metal work function and photocatalysis by TiO 2 layers dip-coated onto metal surfaces. A proposed degradation pathway of dichloroacetate at the solid-liquid interface is discussed.
KW - acetaldehyde degradation
KW - dichloroacetic acid degradation
KW - metal-semiconductor interfaces
KW - photocatalysis
KW - titanium dioxide
UR - http://www.scopus.com/inward/record.url?scp=84939252562&partnerID=8YFLogxK
U2 - 10.1002/cphc.201500281
DO - 10.1002/cphc.201500281
M3 - Article
VL - 16
SP - 2670
EP - 2679
JO - CHEMPHYSCHEM
JF - CHEMPHYSCHEM
SN - 1439-4235
IS - 12
ER -