Influence of the crystal orientation on the microscopic crystallization instabilities during FZ silicon crystal growth

Details

Original language	English
Title of host publication	Modeling in crystal growth
Subtitle of host publication	proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000
Place of Publication	Amsterdam
Publisher	Elsevier
Pages	37-38
Publication status	Published - 2001
Event	3rd International Workshop on Modeling in Crystal Growth - New York Duration: 18 Oct 2000 → 19 Oct 2000 Conference number: 3

Influence of the crystal orientation on the microscopic crystallization instabilities during FZ silicon crystal growth. / Madzulis, I.; Muiznieks, Andris; Mühlbauer, Alfred et al.
Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier, 2001. p. 37-38.

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research

Madzulis, I, Muiznieks, A, Mühlbauer, A & Raming, G 2001, Influence of the crystal orientation on the microscopic crystallization instabilities during FZ silicon crystal growth. in Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Elsevier, Amsterdam, pp. 37-38, 3rd International Workshop on Modeling in Crystal Growth, New York, 18 Oct 2000.

Madzulis, I., Muiznieks, A., Mühlbauer, A., & Raming, G. (2001). Influence of the crystal orientation on the microscopic crystallization instabilities during FZ silicon crystal growth. In Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000 (pp. 37-38). Elsevier.

Madzulis I, Muiznieks A, Mühlbauer A, Raming G. Influence of the crystal orientation on the microscopic crystallization instabilities during FZ silicon crystal growth. In Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier. 2001. p. 37-38

Madzulis, I. ; Muiznieks, Andris ; Mühlbauer, Alfred et al. / Influence of the crystal orientation on the microscopic crystallization instabilities during FZ silicon crystal growth. Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam : Elsevier, 2001. pp. 37-38

@inproceedings{badb5d796e9b49959d219c386e5b2255,

title = "Influence of the crystal orientation on the microscopic crystallization instabilities during FZ silicon crystal growth",

author = "I. Madzulis and Andris Muiznieks and Alfred M{\"u}hlbauer and Georg Raming",

year = "2001",

language = "English",

pages = "37--38",

booktitle = "Modeling in crystal growth",

publisher = "Elsevier",

address = "Netherlands",

note = "3rd International Workshop on Modeling in Crystal Growth ; Conference date: 18-10-2000 Through 19-10-2000",

}

TY - GEN

T1 - Influence of the crystal orientation on the microscopic crystallization instabilities during FZ silicon crystal growth

AU - Madzulis, I.

AU - Muiznieks, Andris

AU - Mühlbauer, Alfred

AU - Raming, Georg

N1 - Conference code: 3

PY - 2001

Y1 - 2001

M3 - Conference contribution

SP - 37

EP - 38

BT - Modeling in crystal growth

PB - Elsevier

CY - Amsterdam

T2 - 3rd International Workshop on Modeling in Crystal Growth

Y2 - 18 October 2000 through 19 October 2000

ER -