Details
| Original language | English |
|---|---|
| Title of host publication | 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012 |
| Publication status | Published - 2012 |
| Event | 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012 - Cascais, Portugal Duration: 16 Apr 2012 → 18 Apr 2012 |
Publication series
| Name | 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012 |
|---|
Abstract
An exemplified calculation of migration effects was carried out for a via structure of 32nm node dimensions with wide lines. In the mechanical simulation the process-induced stress was considered in the simulations. The mass flux divergence was determined using a user routine which allows the calculation of migration effects under EM and SM load. The investigated cases show a very good correlation between simulation and measurements from literature. Additional the influence of new barrier materials like Ruthenium, as well as different dielectrics on the thermal-electrical mechanical behaviour was investigated.
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
- Mathematics(all)
- Modelling and Simulation
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2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012. 2012. 6191701 (2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Influence of the barrier properties on the mechanical stress and migration distribution in a copper metallization
AU - Kludt, Jörg
AU - Ciptokusumo, J.
AU - Weide-Zaage, K.
N1 - Copyright: Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012
Y1 - 2012
N2 - An exemplified calculation of migration effects was carried out for a via structure of 32nm node dimensions with wide lines. In the mechanical simulation the process-induced stress was considered in the simulations. The mass flux divergence was determined using a user routine which allows the calculation of migration effects under EM and SM load. The investigated cases show a very good correlation between simulation and measurements from literature. Additional the influence of new barrier materials like Ruthenium, as well as different dielectrics on the thermal-electrical mechanical behaviour was investigated.
AB - An exemplified calculation of migration effects was carried out for a via structure of 32nm node dimensions with wide lines. In the mechanical simulation the process-induced stress was considered in the simulations. The mass flux divergence was determined using a user routine which allows the calculation of migration effects under EM and SM load. The investigated cases show a very good correlation between simulation and measurements from literature. Additional the influence of new barrier materials like Ruthenium, as well as different dielectrics on the thermal-electrical mechanical behaviour was investigated.
UR - http://www.scopus.com/inward/record.url?scp=84861407025&partnerID=8YFLogxK
U2 - 10.1109/ESimE.2012.6191701
DO - 10.1109/ESimE.2012.6191701
M3 - Conference contribution
AN - SCOPUS:84861407025
SN - 9781467315128
T3 - 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012
BT - 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012
T2 - 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012
Y2 - 16 April 2012 through 18 April 2012
ER -