Details
| Original language | English |
|---|---|
| Pages (from-to) | 38-44 |
| Number of pages | 7 |
| Journal | THIN SOLID FILMS |
| Volume | 645 |
| Early online date | 11 Oct 2017 |
| Publication status | Published - 1 Jan 2018 |
| Externally published | Yes |
Abstract
A novel liquid phase synthesis of MoS2 thin films has been achieved. Solubility of Molybdenum(V) chloride in appropriate solvent was optimized while having good coating properties essential for thin film formation. Chemical conversion of the deposited Mo-precursor films on silicon/silicon dioxide substrate to MoS2 were obtained by annealing in presence of sulfur. This novel method allows facile upscaling process to large substrates with uniform film thickness down to 4 nm, which are of high interest for future low-cost fabrication of electronic devices. UV–Vis, Raman spectroscopy, and X-ray photoelectron spectroscopy measurements confirm the formation of MoS2 films with a stoichiometric chemical composition of Mo/S ~ 0.47. Furthermore, X-ray diffraction and Transmission electron microscopy measurements revealed formation of polycrystalline films with random grain orientation attributed to the amorphous SiO2 surface of the substrate. Improved crystallinity of deposited films was achieved by increasing the process temperature. Annealing at temperatures above 750 °C increased the uniformity of multilayer films, together with the increase of MoS2 grain size to 100 nm. This simple wet-chemical synthesis approach allows upscaling, controllable film thickness and is suitable for preparation of other transition metal dichalcogenides thin films for applications in the future electronics.
Keywords
- Molybdenum disulfide, Precursor, Semiconductor, Solution process, Two-dimensional (2D) material
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Metals and Alloys
- Materials Science(all)
- Materials Chemistry
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In: THIN SOLID FILMS, Vol. 645, 01.01.2018, p. 38-44.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Influence of temperature on morphological and optical properties of MoS2 layers as grown based on solution processed precursor
AU - Gomes, Francis Oliver Vinay
AU - Pokle, Anuj
AU - Marinkovic, Marko
AU - Balster, Torsten
AU - Canavan, Megan
AU - Fleischer, Karsten
AU - Anselmann, Ralf
AU - Nicolosi, Valeria
AU - Wagner, Veit
N1 - Funding Information: The authors acknowledge the financial support by the Marie Curie ITN network “MoWSeS” (grant no. 317451 ), Prof. Arnulf Materny from Jacobs University Bremen, Germany and his research group for the Raman measurements, Fachhochschule Münster, Germany for assistance with SEM measurements, and Clive Downing from Trinity College Dublin, Ireland for TEM support.
PY - 2018/1/1
Y1 - 2018/1/1
N2 - A novel liquid phase synthesis of MoS2 thin films has been achieved. Solubility of Molybdenum(V) chloride in appropriate solvent was optimized while having good coating properties essential for thin film formation. Chemical conversion of the deposited Mo-precursor films on silicon/silicon dioxide substrate to MoS2 were obtained by annealing in presence of sulfur. This novel method allows facile upscaling process to large substrates with uniform film thickness down to 4 nm, which are of high interest for future low-cost fabrication of electronic devices. UV–Vis, Raman spectroscopy, and X-ray photoelectron spectroscopy measurements confirm the formation of MoS2 films with a stoichiometric chemical composition of Mo/S ~ 0.47. Furthermore, X-ray diffraction and Transmission electron microscopy measurements revealed formation of polycrystalline films with random grain orientation attributed to the amorphous SiO2 surface of the substrate. Improved crystallinity of deposited films was achieved by increasing the process temperature. Annealing at temperatures above 750 °C increased the uniformity of multilayer films, together with the increase of MoS2 grain size to 100 nm. This simple wet-chemical synthesis approach allows upscaling, controllable film thickness and is suitable for preparation of other transition metal dichalcogenides thin films for applications in the future electronics.
AB - A novel liquid phase synthesis of MoS2 thin films has been achieved. Solubility of Molybdenum(V) chloride in appropriate solvent was optimized while having good coating properties essential for thin film formation. Chemical conversion of the deposited Mo-precursor films on silicon/silicon dioxide substrate to MoS2 were obtained by annealing in presence of sulfur. This novel method allows facile upscaling process to large substrates with uniform film thickness down to 4 nm, which are of high interest for future low-cost fabrication of electronic devices. UV–Vis, Raman spectroscopy, and X-ray photoelectron spectroscopy measurements confirm the formation of MoS2 films with a stoichiometric chemical composition of Mo/S ~ 0.47. Furthermore, X-ray diffraction and Transmission electron microscopy measurements revealed formation of polycrystalline films with random grain orientation attributed to the amorphous SiO2 surface of the substrate. Improved crystallinity of deposited films was achieved by increasing the process temperature. Annealing at temperatures above 750 °C increased the uniformity of multilayer films, together with the increase of MoS2 grain size to 100 nm. This simple wet-chemical synthesis approach allows upscaling, controllable film thickness and is suitable for preparation of other transition metal dichalcogenides thin films for applications in the future electronics.
KW - Molybdenum disulfide
KW - Precursor
KW - Semiconductor
KW - Solution process
KW - Two-dimensional (2D) material
UR - http://www.scopus.com/inward/record.url?scp=85032290536&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2017.10.022
DO - 10.1016/j.tsf.2017.10.022
M3 - Article
AN - SCOPUS:85032290536
VL - 645
SP - 38
EP - 44
JO - THIN SOLID FILMS
JF - THIN SOLID FILMS
SN - 0040-6090
ER -