Details
| Original language | English |
|---|---|
| Title of host publication | Physics of Semiconductors - 29th International Conference, ICPS 29 |
| Pages | 15-16 |
| Number of pages | 2 |
| Publication status | Published - 1 Dec 2009 |
| Event | 29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil Duration: 27 Jul 2008 → 1 Aug 2008 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1199 |
| ISSN (Print) | 0094-243X |
| ISSN (electronic) | 1551-7616 |
Abstract
In this paper, we investigated the influence of changes in the initial micro-faceting induced by different Sb coverages on the structural properties of relaxed Ge films on Si(001). Two cases of surfactant-induced micro-faceted surfaces, exhibiting <110>- and <100>-oriented troughs for high and low Sb-coverage, respectively, were carefully prepared and 1 μm thick Ge layers were grown. Transmission electron microscopy and x-ray diffraction were used to explore the effects that differently oriented surfactant-induced micro-facets exert on the structural film properties, in particular with regard to the Ge/Si interface.
Keywords
- Germanium, Silicon, Surfactant mediated epitaxy
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
Cite this
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Physics of Semiconductors - 29th International Conference, ICPS 29. 2009. p. 15-16 (AIP Conference Proceedings; Vol. 1199).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Influence of Sb induced surface faceting on structural properties of relaxed Ge films on Si(001)
AU - Wietler, T. F.
AU - Rugeramigabo, E. P.
AU - Bugiel, E.
AU - Hofmann, K. R.
PY - 2009/12/1
Y1 - 2009/12/1
N2 - In this paper, we investigated the influence of changes in the initial micro-faceting induced by different Sb coverages on the structural properties of relaxed Ge films on Si(001). Two cases of surfactant-induced micro-faceted surfaces, exhibiting <110>- and <100>-oriented troughs for high and low Sb-coverage, respectively, were carefully prepared and 1 μm thick Ge layers were grown. Transmission electron microscopy and x-ray diffraction were used to explore the effects that differently oriented surfactant-induced micro-facets exert on the structural film properties, in particular with regard to the Ge/Si interface.
AB - In this paper, we investigated the influence of changes in the initial micro-faceting induced by different Sb coverages on the structural properties of relaxed Ge films on Si(001). Two cases of surfactant-induced micro-faceted surfaces, exhibiting <110>- and <100>-oriented troughs for high and low Sb-coverage, respectively, were carefully prepared and 1 μm thick Ge layers were grown. Transmission electron microscopy and x-ray diffraction were used to explore the effects that differently oriented surfactant-induced micro-facets exert on the structural film properties, in particular with regard to the Ge/Si interface.
KW - Germanium
KW - Silicon
KW - Surfactant mediated epitaxy
UR - http://www.scopus.com/inward/record.url?scp=74849113775&partnerID=8YFLogxK
U2 - 10.1063/1.3295345
DO - 10.1063/1.3295345
M3 - Conference contribution
AN - SCOPUS:74849113775
SN - 9780735407367
T3 - AIP Conference Proceedings
SP - 15
EP - 16
BT - Physics of Semiconductors - 29th International Conference, ICPS 29
T2 - 29th International Conference on Physics of Semiconductors, ICPS 29
Y2 - 27 July 2008 through 1 August 2008
ER -