Influence of Operation- and Program-States on the Breakdown Effects of Electronics by Impact of EMP and UWB

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

  • Michael Camp
  • Heyno Garbe
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Details

Original languageEnglish
Title of host publication2003 IEEE International Symposium on Electromagnetic Compatibility
Subtitle of host publicationEMC ´03
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1032-1035
Number of pages4
ISBN (electronic)0780377796
Publication statusPublished - 2003
Event2003 IEEE International Symposium on Electromagnetic Compatibility, EMC 2003 - Istanbul, Turkey
Duration: 11 May 200316 May 2003

Publication series

NameIEEE International Symposium on Electromagnetic Compatibility
Volume2
ISSN (Print)1077-4076
ISSN (electronic)2158-1118

Abstract

This paper deals with the influence of different operation-and program-states on the breakdown effects of electronics by impact of EMP and UWB pulses. Different electronic devices like shift registers, microcontrollers and personal computers were exposed to high amplitude transient pulses.

Keywords

    Electronics, EMP, Susceptibility, UWB

ASJC Scopus subject areas

Cite this

Influence of Operation- and Program-States on the Breakdown Effects of Electronics by Impact of EMP and UWB. / Camp, Michael; Garbe, Heyno.
2003 IEEE International Symposium on Electromagnetic Compatibility: EMC ´03. Institute of Electrical and Electronics Engineers Inc., 2003. p. 1032-1035 1429090 (IEEE International Symposium on Electromagnetic Compatibility; Vol. 2).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Camp, M & Garbe, H 2003, Influence of Operation- and Program-States on the Breakdown Effects of Electronics by Impact of EMP and UWB. in 2003 IEEE International Symposium on Electromagnetic Compatibility: EMC ´03., 1429090, IEEE International Symposium on Electromagnetic Compatibility, vol. 2, Institute of Electrical and Electronics Engineers Inc., pp. 1032-1035, 2003 IEEE International Symposium on Electromagnetic Compatibility, EMC 2003, Istanbul, Turkey, 11 May 2003. https://doi.org/10.1109/ICSMC2.2003.1429090
Camp, M., & Garbe, H. (2003). Influence of Operation- and Program-States on the Breakdown Effects of Electronics by Impact of EMP and UWB. In 2003 IEEE International Symposium on Electromagnetic Compatibility: EMC ´03 (pp. 1032-1035). Article 1429090 (IEEE International Symposium on Electromagnetic Compatibility; Vol. 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSMC2.2003.1429090
Camp M, Garbe H. Influence of Operation- and Program-States on the Breakdown Effects of Electronics by Impact of EMP and UWB. In 2003 IEEE International Symposium on Electromagnetic Compatibility: EMC ´03. Institute of Electrical and Electronics Engineers Inc. 2003. p. 1032-1035. 1429090. (IEEE International Symposium on Electromagnetic Compatibility). doi: 10.1109/ICSMC2.2003.1429090
Camp, Michael ; Garbe, Heyno. / Influence of Operation- and Program-States on the Breakdown Effects of Electronics by Impact of EMP and UWB. 2003 IEEE International Symposium on Electromagnetic Compatibility: EMC ´03. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 1032-1035 (IEEE International Symposium on Electromagnetic Compatibility).
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