Details
| Original language | English |
|---|---|
| Article number | 014 |
| Pages (from-to) | 82-85 |
| Number of pages | 4 |
| Journal | Semiconductor Science and Technology |
| Volume | 7 |
| Issue number | 1 |
| Publication status | Published - 1 Dec 1992 |
| Externally published | Yes |
Abstract
The longitudinal magnetoresistance of a two-dimensional electron gas is shown to be strongly dependent on the presence of ohmic contacts between the voltage probes. By connecting or disconnecting contacts with additional gates across the potential probes it is possible to drastically change the amplitude of Shubnikov-de Haas oscillations.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Semiconductor Science and Technology, Vol. 7, No. 1, 014, 01.12.1992, p. 82-85.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Influence of ohmic contacts on the amplitude of Shubnikov-de Haas oscillations
AU - Von Klitzing, K.
AU - Nieder, J.
AU - Haug, R. J.
AU - Muller, G.
AU - Koch, S.
AU - Weiss, D.
AU - Ploog, K.
PY - 1992/12/1
Y1 - 1992/12/1
N2 - The longitudinal magnetoresistance of a two-dimensional electron gas is shown to be strongly dependent on the presence of ohmic contacts between the voltage probes. By connecting or disconnecting contacts with additional gates across the potential probes it is possible to drastically change the amplitude of Shubnikov-de Haas oscillations.
AB - The longitudinal magnetoresistance of a two-dimensional electron gas is shown to be strongly dependent on the presence of ohmic contacts between the voltage probes. By connecting or disconnecting contacts with additional gates across the potential probes it is possible to drastically change the amplitude of Shubnikov-de Haas oscillations.
UR - http://www.scopus.com/inward/record.url?scp=0026626779&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/7/1/014
DO - 10.1088/0268-1242/7/1/014
M3 - Article
AN - SCOPUS:0026626779
VL - 7
SP - 82
EP - 85
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 1
M1 - 014
ER -