Details
| Original language | English |
|---|---|
| Article number | 063708 |
| Journal | Journal of applied physics |
| Volume | 110 |
| Issue number | 6 |
| Publication status | Published - 20 Sept 2011 |
| Externally published | Yes |
Abstract
In this study, we present experimental data regarding the concentration of the boron-oxygen complex in compensated n-type silicon when subjected to illumination. We find that the defect density is independent of the net dopant concentration and is strongly dependent on the minority carrier concentration during illumination. We show that annealing at temperatures in the range 500 C to 700 C permanently reduces the defect density possibly via a decrease in the oxygen dimer concentration.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 110, No. 6, 063708, 20.09.2011.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon
AU - Rougieux, F. E.
AU - Lim, B.
AU - Schmidt, J.
AU - Forster, M.
AU - MacDonald, D.
AU - Cuevas, A.
PY - 2011/9/20
Y1 - 2011/9/20
N2 - In this study, we present experimental data regarding the concentration of the boron-oxygen complex in compensated n-type silicon when subjected to illumination. We find that the defect density is independent of the net dopant concentration and is strongly dependent on the minority carrier concentration during illumination. We show that annealing at temperatures in the range 500 C to 700 C permanently reduces the defect density possibly via a decrease in the oxygen dimer concentration.
AB - In this study, we present experimental data regarding the concentration of the boron-oxygen complex in compensated n-type silicon when subjected to illumination. We find that the defect density is independent of the net dopant concentration and is strongly dependent on the minority carrier concentration during illumination. We show that annealing at temperatures in the range 500 C to 700 C permanently reduces the defect density possibly via a decrease in the oxygen dimer concentration.
UR - http://www.scopus.com/inward/record.url?scp=80053532616&partnerID=8YFLogxK
U2 - 10.1063/1.3633492
DO - 10.1063/1.3633492
M3 - Article
AN - SCOPUS:80053532616
VL - 110
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 6
M1 - 063708
ER -