Details
| Original language | English |
|---|---|
| Article number | 113508 |
| Journal | Applied physics letters |
| Volume | 90 |
| Issue number | 11 |
| Publication status | Published - 13 Mar 2007 |
Abstract
The authors report on the impact of interface layer composition on electrical properties of epitaxial Gd2 O3 thin films on Si(001) substrates. The electrical properties of epitaxial Gd2 O3 thin films were improved significantly by controlled modification of interface layer composition. The minimum capacitance equivalent thickness estimated for Pt Gd2 O3 Si metal oxide semiconductor structures was as low as 0.76 nm with leakage current density of 15 mA cm2 at (Vg - VFB) =1 V. The corresponding density of interface states was found to be 2.3× 1012 cm-2 eV-1. The authors also find that a change in the interface layer composition significantly alters band alignment of Gd2 O3 layer with respect to Si substrates.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied physics letters, Vol. 90, No. 11, 113508, 13.03.2007.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high- K application
AU - Laha, Apurba
AU - Osten, H. J.
AU - Fissel, A.
N1 - Funding Information: One of the authors (A.L.) would like to thank the Alexander von Humboldt Foundation for assigning a fellowship.
PY - 2007/3/13
Y1 - 2007/3/13
N2 - The authors report on the impact of interface layer composition on electrical properties of epitaxial Gd2 O3 thin films on Si(001) substrates. The electrical properties of epitaxial Gd2 O3 thin films were improved significantly by controlled modification of interface layer composition. The minimum capacitance equivalent thickness estimated for Pt Gd2 O3 Si metal oxide semiconductor structures was as low as 0.76 nm with leakage current density of 15 mA cm2 at (Vg - VFB) =1 V. The corresponding density of interface states was found to be 2.3× 1012 cm-2 eV-1. The authors also find that a change in the interface layer composition significantly alters band alignment of Gd2 O3 layer with respect to Si substrates.
AB - The authors report on the impact of interface layer composition on electrical properties of epitaxial Gd2 O3 thin films on Si(001) substrates. The electrical properties of epitaxial Gd2 O3 thin films were improved significantly by controlled modification of interface layer composition. The minimum capacitance equivalent thickness estimated for Pt Gd2 O3 Si metal oxide semiconductor structures was as low as 0.76 nm with leakage current density of 15 mA cm2 at (Vg - VFB) =1 V. The corresponding density of interface states was found to be 2.3× 1012 cm-2 eV-1. The authors also find that a change in the interface layer composition significantly alters band alignment of Gd2 O3 layer with respect to Si substrates.
UR - http://www.scopus.com/inward/record.url?scp=33947326574&partnerID=8YFLogxK
U2 - 10.1063/1.2713142
DO - 10.1063/1.2713142
M3 - Article
AN - SCOPUS:33947326574
VL - 90
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 11
M1 - 113508
ER -