Details
| Original language | English |
|---|---|
| Pages (from-to) | 548-551 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 204 |
| Issue number | 1 |
| Publication status | Published - Nov 1997 |
| Externally published | Yes |
Abstract
We investigate the influence of carrier relaxation on the emission dynamics of a semiconductor microcavity laser. The structure is optically excited with energies of 1.477 down to 1.346 eV (resonant excitation). The stimulated emission dynamics clearly becomes faster for decreasing excitation energy and the influence of the light hole on the emission dynamics is demonstrated. Theoretical calculations reproduce the results only if the nonequilibrium carrier dynamics is treated on the basis of a microscopic model.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica Status Solidi (B) Basic Research, Vol. 204, No. 1, 11.1997, p. 548-551.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Influence of carrier cooling on the emission dynamics of semiconductor microcavity lasers
AU - Hilpert, M.
AU - Hofmann, Martin R.
AU - Ellmers, C.
AU - Oestreich, Michael
AU - Schneider, H. C.
AU - Jahnke, F.
AU - Koch, Stephan W.
AU - Rühle, W. W.
AU - Wolf, H. D.
AU - Bernklau, D.
AU - Riechert, H.
AU - Klann, H.
PY - 1997/11
Y1 - 1997/11
N2 - We investigate the influence of carrier relaxation on the emission dynamics of a semiconductor microcavity laser. The structure is optically excited with energies of 1.477 down to 1.346 eV (resonant excitation). The stimulated emission dynamics clearly becomes faster for decreasing excitation energy and the influence of the light hole on the emission dynamics is demonstrated. Theoretical calculations reproduce the results only if the nonequilibrium carrier dynamics is treated on the basis of a microscopic model.
AB - We investigate the influence of carrier relaxation on the emission dynamics of a semiconductor microcavity laser. The structure is optically excited with energies of 1.477 down to 1.346 eV (resonant excitation). The stimulated emission dynamics clearly becomes faster for decreasing excitation energy and the influence of the light hole on the emission dynamics is demonstrated. Theoretical calculations reproduce the results only if the nonequilibrium carrier dynamics is treated on the basis of a microscopic model.
UR - http://www.scopus.com/inward/record.url?scp=0031499548&partnerID=8YFLogxK
U2 - 10.1002/1521-3951(199711)204:1<548::AID-PSSB548>3.0.CO;2-B
DO - 10.1002/1521-3951(199711)204:1<548::AID-PSSB548>3.0.CO;2-B
M3 - Article
AN - SCOPUS:0031499548
VL - 204
SP - 548
EP - 551
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
SN - 0370-1972
IS - 1
ER -