Increasing the photo-generated current in solar cells with passivating contacts by reducing the poly-Si deposition temperature

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Authors

  • Byungsul Min
  • Malte Ruben Vogt
  • Tobias Wietler
  • Rolf Reineke-Koch
  • Bettina Wolpensinger
  • Eike Köhnen
  • Dominic Tetzlaff
  • Carsten Schinke
  • Rolf Brendel
  • Robby Peibst

Research Organisations

External Research Organisations

  • Institute for Solar Energy Research (ISFH)
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Details

Original languageEnglish
Title of host publicationSiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics
Publication statusPublished - 10 Aug 2018
EventSiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics - Lausanne, Switzerland
Duration: 19 Mar 2018 → 21 Mar 2018

Publication series

NameAIP Conference Proceedings
Volume1999
ISSN (Print)0094-243X
ISSN (electronic)1551-7616

Abstract

This paper investigates the reduction of the parasitic absorption in solar cells with poly-silicon based passivating contacts. We analyze the transparency of poly-Si films fabricated at various deposition temperatures. We observe different surface morphologies by scanning electron microscopy and model their spectroscopic ellipsometry reflection data. Based on the measured optical parameters (n and k) we perform ray tracing simulations for quantifying the expected increase of short-circuit current density of a cell. Our study shows that the poly-Si deposition at 530°C leads to an increase of the photo-generated current density by up to 0.76 mA/cm2 when compared to poly-Si films deposited at 610°C.

ASJC Scopus subject areas

Cite this

Increasing the photo-generated current in solar cells with passivating contacts by reducing the poly-Si deposition temperature. / Min, Byungsul; Vogt, Malte Ruben; Wietler, Tobias et al.
SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. 2018. 040015 (AIP Conference Proceedings; Vol. 1999).

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Min, B, Vogt, MR, Wietler, T, Reineke-Koch, R, Wolpensinger, B, Köhnen, E, Tetzlaff, D, Schinke, C, Brendel, R & Peibst, R 2018, Increasing the photo-generated current in solar cells with passivating contacts by reducing the poly-Si deposition temperature. in SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics., 040015, AIP Conference Proceedings, vol. 1999, SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics, Lausanne, Switzerland, 19 Mar 2018. https://doi.org/10.1063/1.5049278
Min, B., Vogt, M. R., Wietler, T., Reineke-Koch, R., Wolpensinger, B., Köhnen, E., Tetzlaff, D., Schinke, C., Brendel, R., & Peibst, R. (2018). Increasing the photo-generated current in solar cells with passivating contacts by reducing the poly-Si deposition temperature. In SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics Article 040015 (AIP Conference Proceedings; Vol. 1999). https://doi.org/10.1063/1.5049278
Min B, Vogt MR, Wietler T, Reineke-Koch R, Wolpensinger B, Köhnen E et al. Increasing the photo-generated current in solar cells with passivating contacts by reducing the poly-Si deposition temperature. In SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. 2018. 040015. (AIP Conference Proceedings). doi: 10.1063/1.5049278
Min, Byungsul ; Vogt, Malte Ruben ; Wietler, Tobias et al. / Increasing the photo-generated current in solar cells with passivating contacts by reducing the poly-Si deposition temperature. SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. 2018. (AIP Conference Proceedings).
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abstract = "This paper investigates the reduction of the parasitic absorption in solar cells with poly-silicon based passivating contacts. We analyze the transparency of poly-Si films fabricated at various deposition temperatures. We observe different surface morphologies by scanning electron microscopy and model their spectroscopic ellipsometry reflection data. Based on the measured optical parameters (n and k) we perform ray tracing simulations for quantifying the expected increase of short-circuit current density of a cell. Our study shows that the poly-Si deposition at 530°C leads to an increase of the photo-generated current density by up to 0.76 mA/cm2 when compared to poly-Si films deposited at 610°C.",
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AU - Wietler, Tobias

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AU - Wolpensinger, Bettina

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