Increasing process margin in SiGe heterojunction bipolar technology by adding carbon

Research output: Contribution to journal › Article › Research › peer review

Authors

  • H. J. Osten
  • D. Knoll
  • B. Heinemann
  • P. Schley

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Pages (from-to)1910-1912
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume46
Issue number9
Publication statusPublished - Sept 1999
Externally publishedYes

Abstract

The incorporation of low carbon concentration within the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by a variety of subsequent processing steps. Thus, it provides greater flexibility in process design and wider latitude in process margin. We demonstrate almost ideal base current characteristics and cutoff, maximum oscillation frequencies of more than 70 GHz, and delays per stage down to 15 ps for ring oscillators with integrated SiGe:C HBT's.

Keywords

    Heterojunction bipolar transistor, High frequency devices, Si/SiGe:C heterojunction

ASJC Scopus subject areas

Cite this

Increasing process margin in SiGe heterojunction bipolar technology by adding carbon. / Osten, H. J.; Knoll, D.; Heinemann, B. et al.
In: IEEE Transactions on Electron Devices, Vol. 46, No. 9, 09.1999, p. 1910-1912.

Research output: Contribution to journal › Article › Research › peer review

Osten HJ, Knoll D, Heinemann B, Schley P. Increasing process margin in SiGe heterojunction bipolar technology by adding carbon. IEEE Transactions on Electron Devices. 1999 Sept;46(9):1910-1912. doi: 10.1109/16.784193
Osten, H. J. ; Knoll, D. ; Heinemann, B. et al. / Increasing process margin in SiGe heterojunction bipolar technology by adding carbon. In: IEEE Transactions on Electron Devices. 1999 ; Vol. 46, No. 9. pp. 1910-1912.
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