Details
| Original language | English |
|---|---|
| Pages (from-to) | 2192-2200 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 65 |
| Issue number | 6 |
| Publication status | Published - Jun 2017 |
Abstract
In this contribution, a gallium nitride-based 1 GHz Doherty amplifier with in situ waveform measurement capability is presented. With this measurement approach, the high frequency time-domain voltages and currents can be measured directly within the circuit. Therefore, directional couplers are integrated into the output matching network of the carrier and the peak amplifier. In contrast to other measurement techniques for investigating amplifiers under laboratory conditions, with this approach, a more in-depth investigation of realized power amplifiers can be carried out under operational conditions, e.g., for tuning. Especially, it is possible to characterize the interaction of the carrier and the peak amplifier. Hence, to the best knowledge of the authors the load modulation of a Doherty amplifier at the fundamental and the higher harmonics is measured for the first time.
Keywords
- Doherty amplifier, high efficiency, in situ measurements, inverse class F, load modulation, nonlinear systems, power amplifier, time-domain measurements
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Radiation
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE Transactions on Microwave Theory and Techniques, Vol. 65, No. 6, 06.2017, p. 2192-2200.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - In Situ Waveform Measurements Within Doherty Power Amplifier Under Operational Conditions
AU - Probst, Steffen
AU - Denicke, Eckhard
AU - Geck, Bernd
N1 - Publisher Copyright: © 2017 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/6
Y1 - 2017/6
N2 - In this contribution, a gallium nitride-based 1 GHz Doherty amplifier with in situ waveform measurement capability is presented. With this measurement approach, the high frequency time-domain voltages and currents can be measured directly within the circuit. Therefore, directional couplers are integrated into the output matching network of the carrier and the peak amplifier. In contrast to other measurement techniques for investigating amplifiers under laboratory conditions, with this approach, a more in-depth investigation of realized power amplifiers can be carried out under operational conditions, e.g., for tuning. Especially, it is possible to characterize the interaction of the carrier and the peak amplifier. Hence, to the best knowledge of the authors the load modulation of a Doherty amplifier at the fundamental and the higher harmonics is measured for the first time.
AB - In this contribution, a gallium nitride-based 1 GHz Doherty amplifier with in situ waveform measurement capability is presented. With this measurement approach, the high frequency time-domain voltages and currents can be measured directly within the circuit. Therefore, directional couplers are integrated into the output matching network of the carrier and the peak amplifier. In contrast to other measurement techniques for investigating amplifiers under laboratory conditions, with this approach, a more in-depth investigation of realized power amplifiers can be carried out under operational conditions, e.g., for tuning. Especially, it is possible to characterize the interaction of the carrier and the peak amplifier. Hence, to the best knowledge of the authors the load modulation of a Doherty amplifier at the fundamental and the higher harmonics is measured for the first time.
KW - Doherty amplifier
KW - high efficiency
KW - in situ measurements
KW - inverse class F
KW - load modulation
KW - nonlinear systems
KW - power amplifier
KW - time-domain measurements
UR - http://www.scopus.com/inward/record.url?scp=85011665491&partnerID=8YFLogxK
U2 - 10.1109/TMTT.2017.2651809
DO - 10.1109/TMTT.2017.2651809
M3 - Article
AN - SCOPUS:85011665491
VL - 65
SP - 2192
EP - 2200
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
SN - 0018-9480
IS - 6
ER -