In situ waveform measurement approach within an inverse class F GaN power amplifier

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

  • Steffen Probst
  • Bernd Geck
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Details

Original languageEnglish
Title of host publicationInternational Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (electronic)9781467364966
Publication statusPublished - 16 Nov 2015
EventInternational Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015 - Taormina, Italy
Duration: 1 Oct 20152 Oct 2015

Publication series

NameInternational Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015

Abstract

In this contribution a gallium nitride (GaN) based inverse class F (F-1) power amplifier with in situ waveform measurement capability is presented. Which the measurement approach the high frequency time domain voltages and currents in a reference plane can be measured directly in the circuit. Therefore, a directional coupler is integrated in the output matching network of the F-1 power amplifier. With this measurement results, a more in-depth investigation of the F-1 power amplifier can be carried out under operational conditions. Also it is a suitable approach for describing the non-linear behavior of RF circuits under operational conditions.

Keywords

    Efficiency, inverse class F, non-linear, Power amplifiers, time domain measurement

ASJC Scopus subject areas

Cite this

In situ waveform measurement approach within an inverse class F GaN power amplifier. / Probst, Steffen; Geck, Bernd.
International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7330360 (International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Probst, S & Geck, B 2015, In situ waveform measurement approach within an inverse class F GaN power amplifier. in International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015., 7330360, International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015, Institute of Electrical and Electronics Engineers Inc., International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015, Taormina, Italy, 1 Oct 2015. https://doi.org/10.1109/INMMIC.2015.7330360
Probst, S., & Geck, B. (2015). In situ waveform measurement approach within an inverse class F GaN power amplifier. In International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015 Article 7330360 (International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INMMIC.2015.7330360
Probst S, Geck B. In situ waveform measurement approach within an inverse class F GaN power amplifier. In International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7330360. (International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015). doi: 10.1109/INMMIC.2015.7330360
Probst, Steffen ; Geck, Bernd. / In situ waveform measurement approach within an inverse class F GaN power amplifier. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015).
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@inproceedings{196ef4fca9464aef8fc94266e8f62c85,
title = "In situ waveform measurement approach within an inverse class F GaN power amplifier",
abstract = "In this contribution a gallium nitride (GaN) based inverse class F (F-1) power amplifier with in situ waveform measurement capability is presented. Which the measurement approach the high frequency time domain voltages and currents in a reference plane can be measured directly in the circuit. Therefore, a directional coupler is integrated in the output matching network of the F-1 power amplifier. With this measurement results, a more in-depth investigation of the F-1 power amplifier can be carried out under operational conditions. Also it is a suitable approach for describing the non-linear behavior of RF circuits under operational conditions.",
keywords = "Efficiency, inverse class F, non-linear, Power amplifiers, time domain measurement",
author = "Steffen Probst and Bernd Geck",
year = "2015",
month = nov,
day = "16",
doi = "10.1109/INMMIC.2015.7330360",
language = "English",
series = "International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015",
address = "United States",
note = "International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015 ; Conference date: 01-10-2015 Through 02-10-2015",

}

Download

TY - GEN

T1 - In situ waveform measurement approach within an inverse class F GaN power amplifier

AU - Probst, Steffen

AU - Geck, Bernd

PY - 2015/11/16

Y1 - 2015/11/16

N2 - In this contribution a gallium nitride (GaN) based inverse class F (F-1) power amplifier with in situ waveform measurement capability is presented. Which the measurement approach the high frequency time domain voltages and currents in a reference plane can be measured directly in the circuit. Therefore, a directional coupler is integrated in the output matching network of the F-1 power amplifier. With this measurement results, a more in-depth investigation of the F-1 power amplifier can be carried out under operational conditions. Also it is a suitable approach for describing the non-linear behavior of RF circuits under operational conditions.

AB - In this contribution a gallium nitride (GaN) based inverse class F (F-1) power amplifier with in situ waveform measurement capability is presented. Which the measurement approach the high frequency time domain voltages and currents in a reference plane can be measured directly in the circuit. Therefore, a directional coupler is integrated in the output matching network of the F-1 power amplifier. With this measurement results, a more in-depth investigation of the F-1 power amplifier can be carried out under operational conditions. Also it is a suitable approach for describing the non-linear behavior of RF circuits under operational conditions.

KW - Efficiency

KW - inverse class F

KW - non-linear

KW - Power amplifiers

KW - time domain measurement

UR - http://www.scopus.com/inward/record.url?scp=84963522431&partnerID=8YFLogxK

U2 - 10.1109/INMMIC.2015.7330360

DO - 10.1109/INMMIC.2015.7330360

M3 - Conference contribution

AN - SCOPUS:84963522431

T3 - International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015

BT - International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015

Y2 - 1 October 2015 through 2 October 2015

ER -