Details
| Original language | English |
|---|---|
| Pages (from-to) | 630-632 |
| Number of pages | 3 |
| Journal | Applied physics letters |
| Volume | 65 |
| Issue number | 5 |
| Publication status | Published - 1 Aug 1994 |
| Externally published | Yes |
Abstract
Ge and Ge0.99C0.01 layers were grown pseudomorphically on Si(001) and investigated during growth with reflection high energy electron diffraction (RHEED). We show that the RHEED technique permits dynamic monitoring of the in-plane lattice spacing of the growing layer by measuring the distances between diffraction features during growth and applying an appropriate mathematical algorithm. The onset of plastic relaxation in these layers as a function of growth temperature was investigated. Lower growth temperature increases the critical layer thickness. We estimated an overall activation energy of around 0.1 eV. Adding 1% carbon to the Ge layer delays the onset of relaxation. But the Ge1-yCy layer does not behave identically to a pseudomorphic Ge film with an artificially reduced strain. It should rather be considered as a new material.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied physics letters, Vol. 65, No. 5, 01.08.1994, p. 630-632.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - In situ monitoring of strain relaxation during antimony-mediated growth of Ge and Ge1-y Cy layers on Si(001) using reflection high energy electron diffraction
AU - Osten, H. J.
AU - Klatt, J.
PY - 1994/8/1
Y1 - 1994/8/1
N2 - Ge and Ge0.99C0.01 layers were grown pseudomorphically on Si(001) and investigated during growth with reflection high energy electron diffraction (RHEED). We show that the RHEED technique permits dynamic monitoring of the in-plane lattice spacing of the growing layer by measuring the distances between diffraction features during growth and applying an appropriate mathematical algorithm. The onset of plastic relaxation in these layers as a function of growth temperature was investigated. Lower growth temperature increases the critical layer thickness. We estimated an overall activation energy of around 0.1 eV. Adding 1% carbon to the Ge layer delays the onset of relaxation. But the Ge1-yCy layer does not behave identically to a pseudomorphic Ge film with an artificially reduced strain. It should rather be considered as a new material.
AB - Ge and Ge0.99C0.01 layers were grown pseudomorphically on Si(001) and investigated during growth with reflection high energy electron diffraction (RHEED). We show that the RHEED technique permits dynamic monitoring of the in-plane lattice spacing of the growing layer by measuring the distances between diffraction features during growth and applying an appropriate mathematical algorithm. The onset of plastic relaxation in these layers as a function of growth temperature was investigated. Lower growth temperature increases the critical layer thickness. We estimated an overall activation energy of around 0.1 eV. Adding 1% carbon to the Ge layer delays the onset of relaxation. But the Ge1-yCy layer does not behave identically to a pseudomorphic Ge film with an artificially reduced strain. It should rather be considered as a new material.
UR - http://www.scopus.com/inward/record.url?scp=21544440957&partnerID=8YFLogxK
U2 - 10.1063/1.112253
DO - 10.1063/1.112253
M3 - Article
AN - SCOPUS:21544440957
VL - 65
SP - 630
EP - 632
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 5
ER -