Details
| Original language | English |
|---|---|
| Pages (from-to) | 476-478 |
| Number of pages | 3 |
| Journal | Journal of crystal growth |
| Volume | 127 |
| Issue number | 1-4 |
| Publication status | Published - 2 Feb 1993 |
| Externally published | Yes |
Abstract
We describe an attempt to perform the UV/ozone cleaning step for silicon wafers within the ultrahigh vacuum system. By introducing the UV/ozone cleaning into the load lock of the MBE equipment we avoid the contact of the normally ex situ UV/ozone precleaned substrate to air. In addition we gain a further degree of freedom, namely the oxygen partial pressure. The influence of that pressure on removing carbon-containing contaminations and on the properties of the in situ formed thin oxide layer is investigated by X-ray photoelectron spectroscopy (XPS) without breaking the vacuum.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Journal of crystal growth, Vol. 127, No. 1-4, 02.02.1993, p. 476-478.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - In situ cleaning of Si surfaces by UV/ozone
AU - Lippert, G.
AU - Osten, H. J.
PY - 1993/2/2
Y1 - 1993/2/2
N2 - We describe an attempt to perform the UV/ozone cleaning step for silicon wafers within the ultrahigh vacuum system. By introducing the UV/ozone cleaning into the load lock of the MBE equipment we avoid the contact of the normally ex situ UV/ozone precleaned substrate to air. In addition we gain a further degree of freedom, namely the oxygen partial pressure. The influence of that pressure on removing carbon-containing contaminations and on the properties of the in situ formed thin oxide layer is investigated by X-ray photoelectron spectroscopy (XPS) without breaking the vacuum.
AB - We describe an attempt to perform the UV/ozone cleaning step for silicon wafers within the ultrahigh vacuum system. By introducing the UV/ozone cleaning into the load lock of the MBE equipment we avoid the contact of the normally ex situ UV/ozone precleaned substrate to air. In addition we gain a further degree of freedom, namely the oxygen partial pressure. The influence of that pressure on removing carbon-containing contaminations and on the properties of the in situ formed thin oxide layer is investigated by X-ray photoelectron spectroscopy (XPS) without breaking the vacuum.
UR - http://www.scopus.com/inward/record.url?scp=0027904571&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(93)90664-I
DO - 10.1016/0022-0248(93)90664-I
M3 - Article
AN - SCOPUS:0027904571
VL - 127
SP - 476
EP - 478
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 1-4
ER -