Details
| Original language | English |
|---|---|
| Pages (from-to) | 524-258 |
| Number of pages | 267 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 18 |
| Issue number | 1 |
| Publication status | Published - 1 Jan 2000 |
| Externally published | Yes |
Abstract
The depth profiles of B deltas in Si produced under two somewhat extreme growth conditions, one in the range of standard molecular beam epitaxy (MBE) temperatures and the other one close to room temperature. In the latter, diffusion and segregation effects should be negligible. On the other hand, a silicon layer produced at low temperature can be expected to be amorphous, presumably with enhanced surface roughness, yet unpredictable in magnitude.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 1, 01.01.2000, p. 524-258.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - In search of optimum conditions for the growth of sharp and shallow B-delta markers in Si by molecular beam epitaxy
AU - Wittmaack, K.
AU - Griesche, J.
AU - Osten, H. J.
AU - Patel, S. B.
PY - 2000/1/1
Y1 - 2000/1/1
N2 - The depth profiles of B deltas in Si produced under two somewhat extreme growth conditions, one in the range of standard molecular beam epitaxy (MBE) temperatures and the other one close to room temperature. In the latter, diffusion and segregation effects should be negligible. On the other hand, a silicon layer produced at low temperature can be expected to be amorphous, presumably with enhanced surface roughness, yet unpredictable in magnitude.
AB - The depth profiles of B deltas in Si produced under two somewhat extreme growth conditions, one in the range of standard molecular beam epitaxy (MBE) temperatures and the other one close to room temperature. In the latter, diffusion and segregation effects should be negligible. On the other hand, a silicon layer produced at low temperature can be expected to be amorphous, presumably with enhanced surface roughness, yet unpredictable in magnitude.
UR - http://www.scopus.com/inward/record.url?scp=0033684849&partnerID=8YFLogxK
U2 - 10.1116/1.591225
DO - 10.1116/1.591225
M3 - Article
AN - SCOPUS:0033684849
VL - 18
SP - 524
EP - 258
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 1
ER -