Details
| Original language | English |
|---|---|
| Article number | 6266678 |
| Pages (from-to) | 114-118 |
| Number of pages | 5 |
| Journal | IEEE journal of photovoltaics |
| Volume | 3 |
| Issue number | 1 |
| Publication status | Published - 2013 |
| Externally published | Yes |
Abstract
We apply highly predictive 2-D device simulation to assess the impact of various impurities on the performance of next-generation industrial silicon solar cells. We show that the light-induced boron-oxygen recombination center limits the efficiency to 19.2% on standard Czochralski-grown silicon material. Curing by illumination at elevated temperature is shown to increase the efficiency limit by $+$1.5% absolute to 20.7%. In the second part of this paper, we examine the impact of the most important metallic impurities on the cell efficiency for p-and n-type cells. It is widely believed that solar cells on n-type silicon are less sensitive to metallic impurities. We show that this statement is not generally valid as it is merely based on the properties of Fe but does not account for the properties of Co, Cr, and Ni.
Keywords
- Charge carrier lifetime, impurities, photovoltaic cells, semiconductor device modeling, silicon
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: IEEE journal of photovoltaics, Vol. 3, No. 1, 6266678, 2013, p. 114-118.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Impurity-related limitations of next-generation industrial silicon solar cells
AU - Schmidt, Jan
AU - Lim, Bianca
AU - Walter, Dominic
AU - Bothe, Karsten
AU - Gatz, Sebastian
AU - Dullweber, Thorsten
AU - Altermatt, Pietro P.
PY - 2013
Y1 - 2013
N2 - We apply highly predictive 2-D device simulation to assess the impact of various impurities on the performance of next-generation industrial silicon solar cells. We show that the light-induced boron-oxygen recombination center limits the efficiency to 19.2% on standard Czochralski-grown silicon material. Curing by illumination at elevated temperature is shown to increase the efficiency limit by $+$1.5% absolute to 20.7%. In the second part of this paper, we examine the impact of the most important metallic impurities on the cell efficiency for p-and n-type cells. It is widely believed that solar cells on n-type silicon are less sensitive to metallic impurities. We show that this statement is not generally valid as it is merely based on the properties of Fe but does not account for the properties of Co, Cr, and Ni.
AB - We apply highly predictive 2-D device simulation to assess the impact of various impurities on the performance of next-generation industrial silicon solar cells. We show that the light-induced boron-oxygen recombination center limits the efficiency to 19.2% on standard Czochralski-grown silicon material. Curing by illumination at elevated temperature is shown to increase the efficiency limit by $+$1.5% absolute to 20.7%. In the second part of this paper, we examine the impact of the most important metallic impurities on the cell efficiency for p-and n-type cells. It is widely believed that solar cells on n-type silicon are less sensitive to metallic impurities. We show that this statement is not generally valid as it is merely based on the properties of Fe but does not account for the properties of Co, Cr, and Ni.
KW - Charge carrier lifetime
KW - impurities
KW - photovoltaic cells
KW - semiconductor device modeling
KW - silicon
UR - http://www.scopus.com/inward/record.url?scp=84871726057&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2012.2210030
DO - 10.1109/JPHOTOV.2012.2210030
M3 - Article
AN - SCOPUS:84871726057
VL - 3
SP - 114
EP - 118
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 1
M1 - 6266678
ER -