Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping

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Authors

  • Ayan Roy Chaudhuri
  • A. Fissel
  • V. R. Archakam
  • H. J. Osten

Research Organisations

External Research Organisations

  • Vellore Institute of Technology
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Details

Original languageEnglish
Article number022904
JournalApplied physics letters
Volume102
Issue number2
Publication statusPublished - 14 Jan 2013

Abstract

We report about the effect of nitrogen doping on the electrical properties of epitaxial Gd2O3 thin films. Epitaxial Gd 2O3:N thin films were grown on Si (111) substrates by solid source molecular beam epitaxy using nitrous oxide as the nitridation agent. Substitutional nitrogen incorporation into the dielectric layer was confirmed by secondary ion mass spectroscopy and X-ray photoelectron spectroscopy analysis. Substantial reduction of the leakage current density and disappearance of hysteresis in capacitance-voltage characteristics observed in the Gd2O3:N layers indicate that nitrogen incorporation in Gd2O3 effectively eliminates the adverse effects of the oxygen vacancy induced defects in the oxide layer.

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Cite this

Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping. / Roy Chaudhuri, Ayan; Fissel, A.; Archakam, V. R. et al.
In: Applied physics letters, Vol. 102, No. 2, 022904, 14.01.2013.

Research output: Contribution to journal › Article › Research › peer review

Roy Chaudhuri, A., Fissel, A., Archakam, V. R., & Osten, H. J. (2013). Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping. Applied physics letters, 102(2), Article 022904. https://doi.org/10.1063/1.4775688
Roy Chaudhuri A, Fissel A, Archakam VR, Osten HJ. Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping. Applied physics letters. 2013 Jan 14;102(2):022904. doi: 10.1063/1.4775688
Roy Chaudhuri, Ayan ; Fissel, A. ; Archakam, V. R. et al. / Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping. In: Applied physics letters. 2013 ; Vol. 102, No. 2.
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abstract = "We report about the effect of nitrogen doping on the electrical properties of epitaxial Gd2O3 thin films. Epitaxial Gd 2O3:N thin films were grown on Si (111) substrates by solid source molecular beam epitaxy using nitrous oxide as the nitridation agent. Substitutional nitrogen incorporation into the dielectric layer was confirmed by secondary ion mass spectroscopy and X-ray photoelectron spectroscopy analysis. Substantial reduction of the leakage current density and disappearance of hysteresis in capacitance-voltage characteristics observed in the Gd2O3:N layers indicate that nitrogen incorporation in Gd2O3 effectively eliminates the adverse effects of the oxygen vacancy induced defects in the oxide layer.",
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