Details
| Original language | English |
|---|---|
| Title of host publication | 2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009 |
| Pages | 391-394 |
| Number of pages | 4 |
| Publication status | Published - 2009 |
| Event | 2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009 - Yasmine Hammamet, Tunisia Duration: 13 Dec 2009 → 16 Dec 2009 |
Publication series
| Name | 2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009 |
|---|
Abstract
This paper presets a 8.5 W GaN inverse class-E power amplifier using an output matching network suitable for high power applications. The presented output matching network overcomes several problems i. The original implementation. First a transmission line stub is used directly at the transistor drain to compensate for the drain source capacitance, secon. The lumped inductor i. The original implementation is replaced by a short transmission line, which makes it suitable for high power amplifiers. The designed GaN inverse class-E amplifier achieves a maximum drain efficiency of 77 % with output power of 39 dBm at a drain supply voltage of 35 V. Additionally through varyin. The supply voltag. The presented amplifier gives a drain efficiency greater than 70 % over an 8 dB dynamic range.
Keywords
- GaN, Inverse class-E, Power amplifiers
ASJC Scopus subject areas
- Computer Science(all)
- Hardware and Architecture
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Electrical and Electronic Engineering
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2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009. 2009. p. 391-394 5410908 (2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Improved inverse class-E matching network for microwave high power amplifiers
AU - El Din, Mohamed Gamai
AU - Geck, Bernd
AU - Eul, H.
PY - 2009
Y1 - 2009
N2 - This paper presets a 8.5 W GaN inverse class-E power amplifier using an output matching network suitable for high power applications. The presented output matching network overcomes several problems i. The original implementation. First a transmission line stub is used directly at the transistor drain to compensate for the drain source capacitance, secon. The lumped inductor i. The original implementation is replaced by a short transmission line, which makes it suitable for high power amplifiers. The designed GaN inverse class-E amplifier achieves a maximum drain efficiency of 77 % with output power of 39 dBm at a drain supply voltage of 35 V. Additionally through varyin. The supply voltag. The presented amplifier gives a drain efficiency greater than 70 % over an 8 dB dynamic range.
AB - This paper presets a 8.5 W GaN inverse class-E power amplifier using an output matching network suitable for high power applications. The presented output matching network overcomes several problems i. The original implementation. First a transmission line stub is used directly at the transistor drain to compensate for the drain source capacitance, secon. The lumped inductor i. The original implementation is replaced by a short transmission line, which makes it suitable for high power amplifiers. The designed GaN inverse class-E amplifier achieves a maximum drain efficiency of 77 % with output power of 39 dBm at a drain supply voltage of 35 V. Additionally through varyin. The supply voltag. The presented amplifier gives a drain efficiency greater than 70 % over an 8 dB dynamic range.
KW - GaN
KW - Inverse class-E
KW - Power amplifiers
UR - http://www.scopus.com/inward/record.url?scp=77951492328&partnerID=8YFLogxK
U2 - 10.1109/ICECS.2009.5410908
DO - 10.1109/ICECS.2009.5410908
M3 - Conference contribution
AN - SCOPUS:77951492328
SN - 9781424450916
T3 - 2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009
SP - 391
EP - 394
BT - 2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009
T2 - 2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009
Y2 - 13 December 2009 through 16 December 2009
ER -