Details
| Original language | English |
|---|---|
| Article number | 123707 |
| Journal | Journal of applied physics |
| Volume | 107 |
| Issue number | 12 |
| Publication status | Published - 15 Jun 2010 |
| Externally published | Yes |
Abstract
The carrier lifetime in boron-doped Czochralski-grown silicon is ultimately limited by light-induced boron-oxygen-related recombination centers. These centers can be permanently deactivated by illumination at elevated temperature (70-220 °C). However, the detailed defect reactions leading to permanent deactivation are still unresolved. In this work, we study the impact of oxygen on the deactivation process. We examine the dependence of the deactivation rate on the interstitial oxygen concentration as well as the impact of long-term annealing at 450 °C, leading to the generation of oxygen clusters acting as donors (thermal donors). We find a decrease in the deactivation rate with both increasing interstitial oxygen concentration and increasing thermal donor concentration, suggesting that oxygen is involved in the deactivation process.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 107, No. 12, 123707, 15.06.2010.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Impact of oxygen on the permanent deactivation of boron-oxygen-related recombination centers in crystalline silicon
AU - Lim, Bianca
AU - Bothe, Karsten
AU - Schmidt, Jan
PY - 2010/6/15
Y1 - 2010/6/15
N2 - The carrier lifetime in boron-doped Czochralski-grown silicon is ultimately limited by light-induced boron-oxygen-related recombination centers. These centers can be permanently deactivated by illumination at elevated temperature (70-220 °C). However, the detailed defect reactions leading to permanent deactivation are still unresolved. In this work, we study the impact of oxygen on the deactivation process. We examine the dependence of the deactivation rate on the interstitial oxygen concentration as well as the impact of long-term annealing at 450 °C, leading to the generation of oxygen clusters acting as donors (thermal donors). We find a decrease in the deactivation rate with both increasing interstitial oxygen concentration and increasing thermal donor concentration, suggesting that oxygen is involved in the deactivation process.
AB - The carrier lifetime in boron-doped Czochralski-grown silicon is ultimately limited by light-induced boron-oxygen-related recombination centers. These centers can be permanently deactivated by illumination at elevated temperature (70-220 °C). However, the detailed defect reactions leading to permanent deactivation are still unresolved. In this work, we study the impact of oxygen on the deactivation process. We examine the dependence of the deactivation rate on the interstitial oxygen concentration as well as the impact of long-term annealing at 450 °C, leading to the generation of oxygen clusters acting as donors (thermal donors). We find a decrease in the deactivation rate with both increasing interstitial oxygen concentration and increasing thermal donor concentration, suggesting that oxygen is involved in the deactivation process.
UR - http://www.scopus.com/inward/record.url?scp=77954198407&partnerID=8YFLogxK
U2 - 10.1063/1.3431359
DO - 10.1063/1.3431359
M3 - Article
AN - SCOPUS:77954198407
VL - 107
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 12
M1 - 123707
ER -