Details
| Original language | English |
|---|---|
| Article number | 245201 |
| Journal | Physical Review B |
| Volume | 99 |
| Issue number | 24 |
| Publication status | Published - 3 Jun 2019 |
Abstract
We investigate the influence of Auger electrons on the efficiency of optical spin pumping of donor bound electrons in isotopically enriched silicon by means of time-resolved pump-probe absorption spectroscopy. The experimentally observed drastic shortening of the spin relaxation time with increasing optical excitation results from inelastic scattering between free and localized electrons and an interconnected Orbach-type spin relaxation process. The maximal steady-state degree of polarization of the localized electron spins and the probe-beam-induced depolarization dynamics reveal that the fast, nonthermal energy dissipation of the conduction band electron distribution is detrimental for efficient optical spin initialization. In fact, each absorbed photon creates an Auger electron with enough energy to depolarize the spin of ≈30 donor bound electrons but the fast, nonthermal energy dissipation by phonons reduces this spin relaxation efficiency to approximately unity.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B, Vol. 99, No. 24, 245201, 03.06.2019.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Impact of optically induced carriers on the spin relaxation of localized electron spins in isotopically enriched silicon
AU - Beck, Michael
AU - Abrosimov, Nikolay V.
AU - Hübner, Jens
AU - Oestreich, Michael
N1 - Funding information: We gratefully acknowledge financial support from the NTH School for Contacts in Nanosystems and funding by the German Science Foundation (DFG) via cluster of excellence “QuantumFrontiers” (EXC 2123), research training group RTG 1991, and Project No. OE 177/10-1.
PY - 2019/6/3
Y1 - 2019/6/3
N2 - We investigate the influence of Auger electrons on the efficiency of optical spin pumping of donor bound electrons in isotopically enriched silicon by means of time-resolved pump-probe absorption spectroscopy. The experimentally observed drastic shortening of the spin relaxation time with increasing optical excitation results from inelastic scattering between free and localized electrons and an interconnected Orbach-type spin relaxation process. The maximal steady-state degree of polarization of the localized electron spins and the probe-beam-induced depolarization dynamics reveal that the fast, nonthermal energy dissipation of the conduction band electron distribution is detrimental for efficient optical spin initialization. In fact, each absorbed photon creates an Auger electron with enough energy to depolarize the spin of ≈30 donor bound electrons but the fast, nonthermal energy dissipation by phonons reduces this spin relaxation efficiency to approximately unity.
AB - We investigate the influence of Auger electrons on the efficiency of optical spin pumping of donor bound electrons in isotopically enriched silicon by means of time-resolved pump-probe absorption spectroscopy. The experimentally observed drastic shortening of the spin relaxation time with increasing optical excitation results from inelastic scattering between free and localized electrons and an interconnected Orbach-type spin relaxation process. The maximal steady-state degree of polarization of the localized electron spins and the probe-beam-induced depolarization dynamics reveal that the fast, nonthermal energy dissipation of the conduction band electron distribution is detrimental for efficient optical spin initialization. In fact, each absorbed photon creates an Auger electron with enough energy to depolarize the spin of ≈30 donor bound electrons but the fast, nonthermal energy dissipation by phonons reduces this spin relaxation efficiency to approximately unity.
UR - http://www.scopus.com/inward/record.url?scp=85068870268&partnerID=8YFLogxK
U2 - 10.1103/physrevb.99.245201
DO - 10.1103/physrevb.99.245201
M3 - Article
AN - SCOPUS:85068870268
VL - 99
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 24
M1 - 245201
ER -