Details
Original language | English |
---|---|
Article number | 9402782 |
Pages (from-to) | 908-913 |
Number of pages | 6 |
Journal | IEEE Journal of Photovoltaics |
Volume | 11 |
Issue number | 4 |
Publication status | Published - 13 Apr 2021 |
Abstract
This article investigates the impact of the back-surface-field (BSF) thickness variation within a local aluminum contact on the performance of passivated emitter and rear contact solar cells. A significant difference of BSF thickness between contact endings and the center of dash-shaped contacts is verified experimentally by a comprehensive statistical analysis using scanning electron microscopy. The impact of local BSF thickness differences on the cell performance is studied with 3-D technology computer-aided design (TCAD) device simulations. Several device parameters such as BSF thicknesses, the doping concentration in the BSF profile at rear contacts, or the metallized area fraction at the cell rear side are varied. Our simulation study shows that the open-circuit voltage is mainly affected by locally reduced BSF thicknesses, resulting in an efficiency loss up to 0.14%abs or 0.84%abs, respectively, if an area fraction of 1% or 20% within a local contact has reduced BSF thicknesses. This effect can be minimized either by reducing the metallized area fraction at the cell rear side or by increasing the doping concentration in the BSF profile at aluminum rear contacts. In addition, we demonstrate that the 3-D simulations can be approximated with 2-D simulations by applying a single doping profile with an average BSF thickness, calculated with the harmonic mean.
Keywords
- Local back-surface-field (BSF) thickness, open-circuit voltage, passivated emitter and rear cell (PERC) solar cells
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE Journal of Photovoltaics, Vol. 11, No. 4, 9402782, 13.04.2021, p. 908-913.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Impact of Local Back-Surface-Field Thickness Variation on Performance of PERC Solar Cells
AU - Min, Byungsul
AU - Muller, Matthias
AU - Wolpensinger, Bettina
AU - Fischer, Gerd
AU - Palinginis, Phedon
AU - Neuhaus, Dirk Holger
AU - Brendel, Rolf
N1 - Funding Information: Manuscript received January 18, 2021; revised March 1, 2021 and March 21, 2021; accepted March 22, 2021. Date of publication April 13, 2021; date of current version June 21, 2021. This work was supported by the German Federal Ministry for Economic Affairs and Energy (BMWi) under the acronyms “HE-LENE” and “GENESIS,” under Grant 0325777 and Grant 0324274, respectively. (Corresponding author: Byungsul Min.) Byungsul Min and Bettina Wolpensinger are with the Institute for Solar Energy Research Hamelin, 31860 Emmerthal, Germany (e-mail: min@isfh.de; wolpensinger@isfh.de).
PY - 2021/4/13
Y1 - 2021/4/13
N2 - This article investigates the impact of the back-surface-field (BSF) thickness variation within a local aluminum contact on the performance of passivated emitter and rear contact solar cells. A significant difference of BSF thickness between contact endings and the center of dash-shaped contacts is verified experimentally by a comprehensive statistical analysis using scanning electron microscopy. The impact of local BSF thickness differences on the cell performance is studied with 3-D technology computer-aided design (TCAD) device simulations. Several device parameters such as BSF thicknesses, the doping concentration in the BSF profile at rear contacts, or the metallized area fraction at the cell rear side are varied. Our simulation study shows that the open-circuit voltage is mainly affected by locally reduced BSF thicknesses, resulting in an efficiency loss up to 0.14%abs or 0.84%abs, respectively, if an area fraction of 1% or 20% within a local contact has reduced BSF thicknesses. This effect can be minimized either by reducing the metallized area fraction at the cell rear side or by increasing the doping concentration in the BSF profile at aluminum rear contacts. In addition, we demonstrate that the 3-D simulations can be approximated with 2-D simulations by applying a single doping profile with an average BSF thickness, calculated with the harmonic mean.
AB - This article investigates the impact of the back-surface-field (BSF) thickness variation within a local aluminum contact on the performance of passivated emitter and rear contact solar cells. A significant difference of BSF thickness between contact endings and the center of dash-shaped contacts is verified experimentally by a comprehensive statistical analysis using scanning electron microscopy. The impact of local BSF thickness differences on the cell performance is studied with 3-D technology computer-aided design (TCAD) device simulations. Several device parameters such as BSF thicknesses, the doping concentration in the BSF profile at rear contacts, or the metallized area fraction at the cell rear side are varied. Our simulation study shows that the open-circuit voltage is mainly affected by locally reduced BSF thicknesses, resulting in an efficiency loss up to 0.14%abs or 0.84%abs, respectively, if an area fraction of 1% or 20% within a local contact has reduced BSF thicknesses. This effect can be minimized either by reducing the metallized area fraction at the cell rear side or by increasing the doping concentration in the BSF profile at aluminum rear contacts. In addition, we demonstrate that the 3-D simulations can be approximated with 2-D simulations by applying a single doping profile with an average BSF thickness, calculated with the harmonic mean.
KW - Local back-surface-field (BSF) thickness
KW - open-circuit voltage
KW - passivated emitter and rear cell (PERC) solar cells
UR - http://www.scopus.com/inward/record.url?scp=85104226744&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2021.3068603
DO - 10.1109/JPHOTOV.2021.3068603
M3 - Article
AN - SCOPUS:85104226744
VL - 11
SP - 908
EP - 913
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
SN - 2156-3381
IS - 4
M1 - 9402782
ER -