Impact of ground line position on CMOS interconnect behavior

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Authors

  • M. Faïez Ktata
  • Uwe Arz
  • Hartmut Grabinski
  • Helmut Fischer

Research Organisations

External Research Organisations

  • Infineon Technologies AG
  • Physikalisch-Technische Bundesanstalt PTB
View graph of relations

Details

Original languageEnglish
Title of host publication64th ARFTG Microwave Measurements Conference
Subtitle of host publicationDigital Communications Systems Metrics, ARFTG 2004
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages207-211
Number of pages5
ISBN (electronic)0780389522, 9780780389526
Publication statusPublished - 2004
Event64th ARFTG Microwave Measurements Conference: Digital Communications Systems Metrics, ARFTG 2004 - Orlando, United States
Duration: 2 Dec 2004 → 3 Dec 2004

Publication series

Name64th ARFTG Microwave Measurements Conference: Digital Communications Systems Metrics, ARFTG 2004

Abstract

In this paper, we investigate the impact of ground line position as well as the effects of conductive substrates with different conductivities of 10 S/m (low), 100 S/m (medium) and 10.000 S/m (high) on on-chip interconnects. Characteristic line parameters obtained from field calculations are validated with two-port network analyzer measurements of specially designed test structures in a frequency range up to 50 GHz.

ASJC Scopus subject areas

Cite this

Impact of ground line position on CMOS interconnect behavior. / Faïez Ktata, M.; Arz, Uwe; Grabinski, Hartmut et al.
64th ARFTG Microwave Measurements Conference: Digital Communications Systems Metrics, ARFTG 2004. Institute of Electrical and Electronics Engineers Inc., 2004. p. 207-211 1427600 (64th ARFTG Microwave Measurements Conference: Digital Communications Systems Metrics, ARFTG 2004).

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Faïez Ktata, M, Arz, U, Grabinski, H & Fischer, H 2004, Impact of ground line position on CMOS interconnect behavior. in 64th ARFTG Microwave Measurements Conference: Digital Communications Systems Metrics, ARFTG 2004., 1427600, 64th ARFTG Microwave Measurements Conference: Digital Communications Systems Metrics, ARFTG 2004, Institute of Electrical and Electronics Engineers Inc., pp. 207-211, 64th ARFTG Microwave Measurements Conference: Digital Communications Systems Metrics, ARFTG 2004, Orlando, United States, 2 Dec 2004. https://doi.org/10.1109/ARFTGF.2004.1427600
Faïez Ktata, M., Arz, U., Grabinski, H., & Fischer, H. (2004). Impact of ground line position on CMOS interconnect behavior. In 64th ARFTG Microwave Measurements Conference: Digital Communications Systems Metrics, ARFTG 2004 (pp. 207-211). Article 1427600 (64th ARFTG Microwave Measurements Conference: Digital Communications Systems Metrics, ARFTG 2004). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ARFTGF.2004.1427600
Faïez Ktata M, Arz U, Grabinski H, Fischer H. Impact of ground line position on CMOS interconnect behavior. In 64th ARFTG Microwave Measurements Conference: Digital Communications Systems Metrics, ARFTG 2004. Institute of Electrical and Electronics Engineers Inc. 2004. p. 207-211. 1427600. (64th ARFTG Microwave Measurements Conference: Digital Communications Systems Metrics, ARFTG 2004). doi: 10.1109/ARFTGF.2004.1427600
Faïez Ktata, M. ; Arz, Uwe ; Grabinski, Hartmut et al. / Impact of ground line position on CMOS interconnect behavior. 64th ARFTG Microwave Measurements Conference: Digital Communications Systems Metrics, ARFTG 2004. Institute of Electrical and Electronics Engineers Inc., 2004. pp. 207-211 (64th ARFTG Microwave Measurements Conference: Digital Communications Systems Metrics, ARFTG 2004).
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