Impact of Dielectric Capping Layer Thickness on the Contact Formation between n+-type Passivating Contacts and Screen-printed Fire-through Silver Pastes

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Authors

  • Byungsul Min
  • Nadine Wehmeier
  • Till Brendemuehl
  • Felix Haase
  • Yevgeniya Larionova
  • Lasse Nasebandt
  • Henning Schulte-Huxel
  • Robby Peibst
  • Rolf Brendel

Research Organisations

External Research Organisations

  • Institute for Solar Energy Research (ISFH)
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Details

Original languageEnglish
Title of host publicationSiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics
EditorsRolf Brendel, Christophe Ballif, Sebastien Dubois, Stefan Glunz, Giso Hahn, Jef Poortmans, Pierre Verlinden, Arthur Weeber
ISBN (electronic)9780735443624
Publication statusPublished - 24 Aug 2022
Event11th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021 - Hamelin, Virtual, Germany
Duration: 19 Apr 2021 → 23 Apr 2021

Publication series

NameAIP Conference Proceedings
Volume2487
ISSN (Print)0094-243X
ISSN (electronic)1551-7616

Abstract

This paper presents the approach to reduce the deterioration of poly-Si based passivating contacts through screen-printed silver pastes by modifying the SiNx capping layer thickness and firing temperature. Its impact is investigated by fabricating p-type back junction solar cells featuring the passivating contacts at the cell rear side. We demonstrate that the improved contact formation without compromising of the quality of passivating contacts is possible if the firing temperature is optimized for the chosen SiNx layer thickness. On the full area of M2-sized industrial p-type Cz wafers, we achieve an open-circuit voltage of 716 mV and an efficiency of 22.6%, both independently. A median contact resistivity of 2 mΩcm2 is measured with transfer length method for the optimized SiNx layer thickness and firing temperature. The investigation with scanning electron microcopy shows that certain amount of small etch pits are necessary to form the contact between screen-printed silver and phosphorus-doped poly-Si properly. The best efficiency that we achieved so far with this cell concept is 22.9 %, independently confirmed.

ASJC Scopus subject areas

Cite this

Impact of Dielectric Capping Layer Thickness on the Contact Formation between n+-type Passivating Contacts and Screen-printed Fire-through Silver Pastes. / Min, Byungsul; Wehmeier, Nadine; Brendemuehl, Till et al.
SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics. ed. / Rolf Brendel; Christophe Ballif; Sebastien Dubois; Stefan Glunz; Giso Hahn; Jef Poortmans; Pierre Verlinden; Arthur Weeber. 2022. 020014 (AIP Conference Proceedings; Vol. 2487).

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Min, B, Wehmeier, N, Brendemuehl, T, Haase, F, Larionova, Y, Nasebandt, L, Schulte-Huxel, H, Peibst, R & Brendel, R 2022, Impact of Dielectric Capping Layer Thickness on the Contact Formation between n+-type Passivating Contacts and Screen-printed Fire-through Silver Pastes. in R Brendel, C Ballif, S Dubois, S Glunz, G Hahn, J Poortmans, P Verlinden & A Weeber (eds), SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics., 020014, AIP Conference Proceedings, vol. 2487, 11th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021, Hamelin, Virtual, Germany, 19 Apr 2021. https://doi.org/10.1063/5.0089239
Min, B., Wehmeier, N., Brendemuehl, T., Haase, F., Larionova, Y., Nasebandt, L., Schulte-Huxel, H., Peibst, R., & Brendel, R. (2022). Impact of Dielectric Capping Layer Thickness on the Contact Formation between n+-type Passivating Contacts and Screen-printed Fire-through Silver Pastes. In R. Brendel, C. Ballif, S. Dubois, S. Glunz, G. Hahn, J. Poortmans, P. Verlinden, & A. Weeber (Eds.), SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics Article 020014 (AIP Conference Proceedings; Vol. 2487). https://doi.org/10.1063/5.0089239
Min B, Wehmeier N, Brendemuehl T, Haase F, Larionova Y, Nasebandt L et al. Impact of Dielectric Capping Layer Thickness on the Contact Formation between n+-type Passivating Contacts and Screen-printed Fire-through Silver Pastes. In Brendel R, Ballif C, Dubois S, Glunz S, Hahn G, Poortmans J, Verlinden P, Weeber A, editors, SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics. 2022. 020014. (AIP Conference Proceedings). doi: 10.1063/5.0089239
Min, Byungsul ; Wehmeier, Nadine ; Brendemuehl, Till et al. / Impact of Dielectric Capping Layer Thickness on the Contact Formation between n+-type Passivating Contacts and Screen-printed Fire-through Silver Pastes. SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics. editor / Rolf Brendel ; Christophe Ballif ; Sebastien Dubois ; Stefan Glunz ; Giso Hahn ; Jef Poortmans ; Pierre Verlinden ; Arthur Weeber. 2022. (AIP Conference Proceedings).
Download
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abstract = "This paper presents the approach to reduce the deterioration of poly-Si based passivating contacts through screen-printed silver pastes by modifying the SiNx capping layer thickness and firing temperature. Its impact is investigated by fabricating p-type back junction solar cells featuring the passivating contacts at the cell rear side. We demonstrate that the improved contact formation without compromising of the quality of passivating contacts is possible if the firing temperature is optimized for the chosen SiNx layer thickness. On the full area of M2-sized industrial p-type Cz wafers, we achieve an open-circuit voltage of 716 mV and an efficiency of 22.6%, both independently. A median contact resistivity of 2 mΩcm2 is measured with transfer length method for the optimized SiNx layer thickness and firing temperature. The investigation with scanning electron microcopy shows that certain amount of small etch pits are necessary to form the contact between screen-printed silver and phosphorus-doped poly-Si properly. The best efficiency that we achieved so far with this cell concept is 22.9 %, independently confirmed.",
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AU - Min, Byungsul

AU - Wehmeier, Nadine

AU - Brendemuehl, Till

AU - Haase, Felix

AU - Larionova, Yevgeniya

AU - Nasebandt, Lasse

AU - Schulte-Huxel, Henning

AU - Peibst, Robby

AU - Brendel, Rolf

N1 - Funding Information: The authors thank B. Gehring, M. Pollmann, R. Winter, S. Spaetlich, T. Neubert and D. Sylla for processing solar cells; T. Friedrich for TLM measurements; and K. Bothe, D. Hinken, and M. Wolf (all ISFH) for supporting IV measurements of busbarless solar cells. We also thank M Dhamrin and K. Tsuji from Toyo Aluminium for helpful advices and for providing the aluminium pastes and S. Huebner, T. Dippell, B. Wattenberg, and P. Wohlfahrt from Singulus Technologies AG for constructive discussions. This Work was financially supported by the German Federal Ministry of Economic Affairs and Energy (BMWi) under contact number 03EE1012A (NanoPERC) and a part of this work was supported under contact number 0324171C (Nextstep).

PY - 2022/8/24

Y1 - 2022/8/24

N2 - This paper presents the approach to reduce the deterioration of poly-Si based passivating contacts through screen-printed silver pastes by modifying the SiNx capping layer thickness and firing temperature. Its impact is investigated by fabricating p-type back junction solar cells featuring the passivating contacts at the cell rear side. We demonstrate that the improved contact formation without compromising of the quality of passivating contacts is possible if the firing temperature is optimized for the chosen SiNx layer thickness. On the full area of M2-sized industrial p-type Cz wafers, we achieve an open-circuit voltage of 716 mV and an efficiency of 22.6%, both independently. A median contact resistivity of 2 mΩcm2 is measured with transfer length method for the optimized SiNx layer thickness and firing temperature. The investigation with scanning electron microcopy shows that certain amount of small etch pits are necessary to form the contact between screen-printed silver and phosphorus-doped poly-Si properly. The best efficiency that we achieved so far with this cell concept is 22.9 %, independently confirmed.

AB - This paper presents the approach to reduce the deterioration of poly-Si based passivating contacts through screen-printed silver pastes by modifying the SiNx capping layer thickness and firing temperature. Its impact is investigated by fabricating p-type back junction solar cells featuring the passivating contacts at the cell rear side. We demonstrate that the improved contact formation without compromising of the quality of passivating contacts is possible if the firing temperature is optimized for the chosen SiNx layer thickness. On the full area of M2-sized industrial p-type Cz wafers, we achieve an open-circuit voltage of 716 mV and an efficiency of 22.6%, both independently. A median contact resistivity of 2 mΩcm2 is measured with transfer length method for the optimized SiNx layer thickness and firing temperature. The investigation with scanning electron microcopy shows that certain amount of small etch pits are necessary to form the contact between screen-printed silver and phosphorus-doped poly-Si properly. The best efficiency that we achieved so far with this cell concept is 22.9 %, independently confirmed.

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