Details
| Original language | English |
|---|---|
| Article number | 7882654 |
| Pages (from-to) | 747-754 |
| Number of pages | 8 |
| Journal | IEEE Journal of Photovoltaics |
| Volume | 7 |
| Issue number | 3 |
| Publication status | Published - May 2017 |
Abstract
We analyze the influence of a variety of different contacting geometries on the fill factor (FF) of solar cell I-V measurements. For this analysis, we compare a wide variety of modeled and measured FFs of Si solar cells. We consistently find large FF differences between individual contacting geometries. These differences amount to up to 3%abs for high busbar resistivities of up to 40 Ω/m. We analyze the contacting geometries for their sensitivity on uncontrolled variations of the contacting resistances. In this analysis, we find that using triplet rather than tandem configurations and using a larger number of test probes reduces the impact of varying contacting resistances to below 0.02%abs. We propose a contacting geometry that we consider to be suitable for calibrated I-V measurements. This contacting scheme is a configuration with a total of five triplets consisting of two current probes and one sense probe. The sense probe is positioned to measure the average busbar potential between the current probes. This is the optimal contacting geometry in terms of a low sensitivity to the busbar resistivity and variations of contacting resistances. In addition, this geometry does not impose unnecessarily large mechanical stress to the cell under measurement.
Keywords
- Characterization of photovoltaics (PV), current-voltage characteristics, IEC standards
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: IEEE Journal of Photovoltaics, Vol. 7, No. 3, 7882654, 05.2017, p. 747-754.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Impact of Contacting Geometries When Measuring Fill Factors of Solar Cell Current-Voltage Characteristics
AU - Kruse, Christian N.
AU - Wolf, Martin
AU - Schinke, Carsten
AU - Hinken, David
AU - Brendel, Rolf
AU - Bothe, Karsten
N1 - Publisher Copyright: © 2017 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/5
Y1 - 2017/5
N2 - We analyze the influence of a variety of different contacting geometries on the fill factor (FF) of solar cell I-V measurements. For this analysis, we compare a wide variety of modeled and measured FFs of Si solar cells. We consistently find large FF differences between individual contacting geometries. These differences amount to up to 3%abs for high busbar resistivities of up to 40 Ω/m. We analyze the contacting geometries for their sensitivity on uncontrolled variations of the contacting resistances. In this analysis, we find that using triplet rather than tandem configurations and using a larger number of test probes reduces the impact of varying contacting resistances to below 0.02%abs. We propose a contacting geometry that we consider to be suitable for calibrated I-V measurements. This contacting scheme is a configuration with a total of five triplets consisting of two current probes and one sense probe. The sense probe is positioned to measure the average busbar potential between the current probes. This is the optimal contacting geometry in terms of a low sensitivity to the busbar resistivity and variations of contacting resistances. In addition, this geometry does not impose unnecessarily large mechanical stress to the cell under measurement.
AB - We analyze the influence of a variety of different contacting geometries on the fill factor (FF) of solar cell I-V measurements. For this analysis, we compare a wide variety of modeled and measured FFs of Si solar cells. We consistently find large FF differences between individual contacting geometries. These differences amount to up to 3%abs for high busbar resistivities of up to 40 Ω/m. We analyze the contacting geometries for their sensitivity on uncontrolled variations of the contacting resistances. In this analysis, we find that using triplet rather than tandem configurations and using a larger number of test probes reduces the impact of varying contacting resistances to below 0.02%abs. We propose a contacting geometry that we consider to be suitable for calibrated I-V measurements. This contacting scheme is a configuration with a total of five triplets consisting of two current probes and one sense probe. The sense probe is positioned to measure the average busbar potential between the current probes. This is the optimal contacting geometry in terms of a low sensitivity to the busbar resistivity and variations of contacting resistances. In addition, this geometry does not impose unnecessarily large mechanical stress to the cell under measurement.
KW - Characterization of photovoltaics (PV)
KW - current-voltage characteristics
KW - IEC standards
UR - http://www.scopus.com/inward/record.url?scp=85016099729&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2017.2677084
DO - 10.1109/JPHOTOV.2017.2677084
M3 - Article
AN - SCOPUS:85016099729
VL - 7
SP - 747
EP - 754
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
SN - 2156-3381
IS - 3
M1 - 7882654
ER -