Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties

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Authors

  • Apurba Laha
  • B. Ai
  • P. R.P. Babu
  • A. Fissel
  • H. J. Osten

External Research Organisations

  • Sun Yat-Sen University
  • Vellore Institute of Technology
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Details

Original languageEnglish
Article number152902
JournalApplied physics letters
Volume99
Issue number15
Publication statusPublished - 10 Oct 2011

Abstract

We report on the effect of carbon doping on electrical properties of epitaxial Gd2O3 grown on Si substrates. The incorporation of small amounts of carbon (0.2-0.5 vol. ) into epitaxial Gd2O 3 has been found to be very useful in improving the electrical properties especially by reducing the leakage current behavior. The doping has a negligible impact on the structural quality of the oxide layer. We show that the very often found adverse effect of oxygen vacancy induced defects in oxides grown at higher temperature can be eliminated by moderate amount of carbon doping during growth.

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Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties. / Laha, Apurba; Ai, B.; Babu, P. R.P. et al.
In: Applied physics letters, Vol. 99, No. 15, 152902, 10.10.2011.

Research output: Contribution to journalArticleResearchpeer review

Laha A, Ai B, Babu PRP, Fissel A, Osten HJ. Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties. Applied physics letters. 2011 Oct 10;99(15):152902. doi: 10.1063/1.3646104
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