Details
| Original language | English |
|---|---|
| Pages (from-to) | 136-141 |
| Number of pages | 6 |
| Journal | Microporous and Mesoporous Materials |
| Volume | 277 |
| Early online date | 28 Oct 2018 |
| Publication status | Published - 15 Mar 2019 |
Abstract
The synthesis of metal-organic frameworks (MOFs) as thin films allows their integration into different electronic devices. Particularly, their application in metal-insulating-semiconductor (MIS) capacitors provides a comprehensive study of the electrical transport mechanism and, therefore, of the effect of border traps. A low concentration of border traps guarantees a good performance of MIS capacitors. This paper is focused on the investigation of the charge components within the MOF and near the MOF/substrate interface in ultrathin Cu3(BTC)2 films grown directly on silicon wafers by an innovative spray-coating method. The layer thickness was easily handled by varying the number of spray cycles in the deposition process. The crystal structure and morphology of the films were characterized via X-ray diffraction and Raman spectroscopy. Afterwards, the film thickness was determined via confocal microscopy. The electrical characterization was performed via capacitance-voltage (C-V) measurements in forward and reverse direction at room temperature and at different frequencies. Our results provide evidence of the existence of positive fixed charges in the Cu3(BTC)2 dielectric layer as well as of the presence of border traps which causes hysteresis in the C-V response.
Keywords
- Border traps, Cu(BTC), Metal-insulator-semiconductor capacitor, Metal-organic frameworks, Spray-coating
ASJC Scopus subject areas
- Chemistry(all)
- General Chemistry
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
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In: Microporous and Mesoporous Materials, Vol. 277, 15.03.2019, p. 136-141.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Impact of border traps in ultrathin metal-organic framework Cu3(BTC)2 based capacitors
AU - Montañez, Liz M.
AU - Strauß, Ina
AU - Caro, Jürgen
AU - Osten, Hans-Jörg
N1 - Funding information: This research work was supported by the Hannover School of Nanotechnology (HSN) . TEM measurements were performed by Philipp Gribisch at the Laboratorium für Nano-und Quantenengineering.
PY - 2019/3/15
Y1 - 2019/3/15
N2 - The synthesis of metal-organic frameworks (MOFs) as thin films allows their integration into different electronic devices. Particularly, their application in metal-insulating-semiconductor (MIS) capacitors provides a comprehensive study of the electrical transport mechanism and, therefore, of the effect of border traps. A low concentration of border traps guarantees a good performance of MIS capacitors. This paper is focused on the investigation of the charge components within the MOF and near the MOF/substrate interface in ultrathin Cu3(BTC)2 films grown directly on silicon wafers by an innovative spray-coating method. The layer thickness was easily handled by varying the number of spray cycles in the deposition process. The crystal structure and morphology of the films were characterized via X-ray diffraction and Raman spectroscopy. Afterwards, the film thickness was determined via confocal microscopy. The electrical characterization was performed via capacitance-voltage (C-V) measurements in forward and reverse direction at room temperature and at different frequencies. Our results provide evidence of the existence of positive fixed charges in the Cu3(BTC)2 dielectric layer as well as of the presence of border traps which causes hysteresis in the C-V response.
AB - The synthesis of metal-organic frameworks (MOFs) as thin films allows their integration into different electronic devices. Particularly, their application in metal-insulating-semiconductor (MIS) capacitors provides a comprehensive study of the electrical transport mechanism and, therefore, of the effect of border traps. A low concentration of border traps guarantees a good performance of MIS capacitors. This paper is focused on the investigation of the charge components within the MOF and near the MOF/substrate interface in ultrathin Cu3(BTC)2 films grown directly on silicon wafers by an innovative spray-coating method. The layer thickness was easily handled by varying the number of spray cycles in the deposition process. The crystal structure and morphology of the films were characterized via X-ray diffraction and Raman spectroscopy. Afterwards, the film thickness was determined via confocal microscopy. The electrical characterization was performed via capacitance-voltage (C-V) measurements in forward and reverse direction at room temperature and at different frequencies. Our results provide evidence of the existence of positive fixed charges in the Cu3(BTC)2 dielectric layer as well as of the presence of border traps which causes hysteresis in the C-V response.
KW - Border traps
KW - Cu(BTC)
KW - Metal-insulator-semiconductor capacitor
KW - Metal-organic frameworks
KW - Spray-coating
UR - http://www.scopus.com/inward/record.url?scp=85055904093&partnerID=8YFLogxK
U2 - 10.1016/j.micromeso.2018.10.029
DO - 10.1016/j.micromeso.2018.10.029
M3 - Article
AN - SCOPUS:85055904093
VL - 277
SP - 136
EP - 141
JO - Microporous and Mesoporous Materials
JF - Microporous and Mesoporous Materials
SN - 1387-1811
ER -