Details
| Original language | English |
|---|---|
| Title of host publication | ECS Transactions - High Purity Silicon 10 |
| Publisher | Electrochemical Society, Inc. |
| Pages | 63-78 |
| Number of pages | 16 |
| Edition | 6 |
| ISBN (print) | 9781566776523 |
| Publication status | Published - 2009 |
| Externally published | Yes |
| Event | High Purity Silicon 10 - 214th ECS Meeting - Honolulu, HI, United States Duration: 12 Oct 2008 → 17 Oct 2008 |
Publication series
| Name | ECS Transactions |
|---|---|
| Number | 6 |
| Volume | 16 |
| ISSN (Print) | 1938-5862 |
| ISSN (electronic) | 1938-6737 |
Abstract
For large area devices a spatial analysis of local device and material parameters is essentially important. Imaging techniques allowing a fast and contactless analysis with a high spatial resolution have become a versatile characterization tool during the last decade. We present a comprehensive overview over the existing imaging techniques for the analysis of silicon wafers and solar cells utilizing different spectral ranges of photon emission. Additionally, we report on recent studies of local junction breakdown and the emission of light from solar cells under forward and reverse bias using luminescence imaging and dark lock-in thermography. Finally we present a calibration-free dynamic infrared carrier lifetime mapping (dynamic-ILM) technique, yielding images of the carrier lifetime of multi-crystalline silicon wafers within seconds.
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
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ECS Transactions - High Purity Silicon 10. 6. ed. Electrochemical Society, Inc., 2009. p. 63-78 (ECS Transactions; Vol. 16, No. 6).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Imaging techniques for the analysis of silicon wafers and solar cells
AU - Bothe, K.
AU - Ramspeck, K.
AU - Hinken, D.
AU - Brendel, R.
PY - 2009
Y1 - 2009
N2 - For large area devices a spatial analysis of local device and material parameters is essentially important. Imaging techniques allowing a fast and contactless analysis with a high spatial resolution have become a versatile characterization tool during the last decade. We present a comprehensive overview over the existing imaging techniques for the analysis of silicon wafers and solar cells utilizing different spectral ranges of photon emission. Additionally, we report on recent studies of local junction breakdown and the emission of light from solar cells under forward and reverse bias using luminescence imaging and dark lock-in thermography. Finally we present a calibration-free dynamic infrared carrier lifetime mapping (dynamic-ILM) technique, yielding images of the carrier lifetime of multi-crystalline silicon wafers within seconds.
AB - For large area devices a spatial analysis of local device and material parameters is essentially important. Imaging techniques allowing a fast and contactless analysis with a high spatial resolution have become a versatile characterization tool during the last decade. We present a comprehensive overview over the existing imaging techniques for the analysis of silicon wafers and solar cells utilizing different spectral ranges of photon emission. Additionally, we report on recent studies of local junction breakdown and the emission of light from solar cells under forward and reverse bias using luminescence imaging and dark lock-in thermography. Finally we present a calibration-free dynamic infrared carrier lifetime mapping (dynamic-ILM) technique, yielding images of the carrier lifetime of multi-crystalline silicon wafers within seconds.
UR - http://www.scopus.com/inward/record.url?scp=64149100121&partnerID=8YFLogxK
U2 - 10.1149/1.2980293
DO - 10.1149/1.2980293
M3 - Conference contribution
AN - SCOPUS:64149100121
SN - 9781566776523
T3 - ECS Transactions
SP - 63
EP - 78
BT - ECS Transactions - High Purity Silicon 10
PB - Electrochemical Society, Inc.
T2 - High Purity Silicon 10 - 214th ECS Meeting
Y2 - 12 October 2008 through 17 October 2008
ER -