Details
| Original language | English |
|---|---|
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 6 |
| Issue number | 1 |
| Publication status | Published - Jan 2012 |
| Externally published | Yes |
Abstract
We present a dynamic approach for measuring the interstitial iron concentration in boron-doped crystalline silicon using photoluminescence (PL) imaging. This camera-based technique utilizes the characteristic dependence of the dissociation rate of iron-boron pairs on the interstitial iron concentration. We determine the dissociation rate by measuring the time-dependent PL signal after complete association of iron-boron pairs in the sample. Since we are only interested in the time dependence of the PL signal, we are able to generate images of the interstitial iron concentration in absolute units without any calibration and without knowing the recombination properties of the interstitial iron or iron-boron pairs.
Keywords
- Crystalline silicon, Interstitial iron, Photoluminescence
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica Status Solidi - Rapid Research Letters, Vol. 6, No. 1, 01.2012, p. 1-3.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Imaging of the interstitial iron concentration in crystalline silicon by measuring the dissociation rate of iron-boron pairs
AU - Herlufsen, Sandra
AU - Macdonald, Daniel
AU - Bothe, Karsten
AU - Schmidt, Jan
PY - 2012/1
Y1 - 2012/1
N2 - We present a dynamic approach for measuring the interstitial iron concentration in boron-doped crystalline silicon using photoluminescence (PL) imaging. This camera-based technique utilizes the characteristic dependence of the dissociation rate of iron-boron pairs on the interstitial iron concentration. We determine the dissociation rate by measuring the time-dependent PL signal after complete association of iron-boron pairs in the sample. Since we are only interested in the time dependence of the PL signal, we are able to generate images of the interstitial iron concentration in absolute units without any calibration and without knowing the recombination properties of the interstitial iron or iron-boron pairs.
AB - We present a dynamic approach for measuring the interstitial iron concentration in boron-doped crystalline silicon using photoluminescence (PL) imaging. This camera-based technique utilizes the characteristic dependence of the dissociation rate of iron-boron pairs on the interstitial iron concentration. We determine the dissociation rate by measuring the time-dependent PL signal after complete association of iron-boron pairs in the sample. Since we are only interested in the time dependence of the PL signal, we are able to generate images of the interstitial iron concentration in absolute units without any calibration and without knowing the recombination properties of the interstitial iron or iron-boron pairs.
KW - Crystalline silicon
KW - Interstitial iron
KW - Photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=83455236117&partnerID=8YFLogxK
U2 - 10.1002/pssr.201105499
DO - 10.1002/pssr.201105499
M3 - Article
AN - SCOPUS:83455236117
VL - 6
SP - 1
EP - 3
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 1
ER -