Details
| Original language | English |
|---|---|
| Title of host publication | Optical Thin Films V: New Developments |
| Subtitle of host publication | 30 July-1 August 1997, San Diego, California |
| Place of Publication | Bellingham |
| Publisher | SPIE |
| Pages | 205-213 |
| Number of pages | 9 |
| ISBN (print) | 0-8194-2555-9 |
| Publication status | Published - 1 Oct 1997 |
| Externally published | Yes |
| Event | Optical Thin Films V: New Developments - San Diego, United States Duration: 30 Jul 1997 → 1 Aug 1997 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Publisher | SPIE |
| Volume | 3133 |
| ISSN (Print) | 0277-786X |
Abstract
A comparative study of different ion and plasma assisted physical vapor deposition processes at low temperature is reported. To work out a clear comparison of the different processes, the object of the study are single layers of different metal oxides like Ta2O5, TiO2, SiO2 and mixed oxides like H4 (Merck) deposited on glass and silicon substrates. Three different types of ion- (or plasma-respectively) sources are used: the cold cathode ion source from Denton (CC 104), the end hall ion source Mark II from CSC and the advanced plasma source from Leybold. Each of these processes is run under conditions concerning process parameters like bias, ion current, ion energy, beam characteristics and gas flow, which were understood to be optimized also to maintain long-term stability as realistic production conditions. The resulting metal oxide single layers are characterized by their optical properties, dispersion curves for NUV and VIS as well as absorption and scatter at discrete wavelengths. Also discussed are mechanical properties like hardness and adherence. A test method is presented which clearly shows the superior behavior of the IAD coatings.
Keywords
- Ion assisted deposition, Low temperature deposition, Optical constants, Scatter, Thin oxide films
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Computer Science(all)
- Computer Science Applications
- Mathematics(all)
- Applied Mathematics
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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Optical Thin Films V: New Developments: 30 July-1 August 1997, San Diego, California. Bellingham: SPIE, 1997. p. 205-213 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 3133).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - IAD of oxide coatings at low temperature
T2 - Optical Thin Films V: New Developments
AU - Niederwald, Hansjörg S.
AU - Kaiser, Norbert
AU - Schallenberg, Uwe B.
AU - Duparre, Angela
AU - Ristau, Detlev
AU - Kennedy, Michael
PY - 1997/10/1
Y1 - 1997/10/1
N2 - A comparative study of different ion and plasma assisted physical vapor deposition processes at low temperature is reported. To work out a clear comparison of the different processes, the object of the study are single layers of different metal oxides like Ta2O5, TiO2, SiO2 and mixed oxides like H4 (Merck) deposited on glass and silicon substrates. Three different types of ion- (or plasma-respectively) sources are used: the cold cathode ion source from Denton (CC 104), the end hall ion source Mark II from CSC and the advanced plasma source from Leybold. Each of these processes is run under conditions concerning process parameters like bias, ion current, ion energy, beam characteristics and gas flow, which were understood to be optimized also to maintain long-term stability as realistic production conditions. The resulting metal oxide single layers are characterized by their optical properties, dispersion curves for NUV and VIS as well as absorption and scatter at discrete wavelengths. Also discussed are mechanical properties like hardness and adherence. A test method is presented which clearly shows the superior behavior of the IAD coatings.
AB - A comparative study of different ion and plasma assisted physical vapor deposition processes at low temperature is reported. To work out a clear comparison of the different processes, the object of the study are single layers of different metal oxides like Ta2O5, TiO2, SiO2 and mixed oxides like H4 (Merck) deposited on glass and silicon substrates. Three different types of ion- (or plasma-respectively) sources are used: the cold cathode ion source from Denton (CC 104), the end hall ion source Mark II from CSC and the advanced plasma source from Leybold. Each of these processes is run under conditions concerning process parameters like bias, ion current, ion energy, beam characteristics and gas flow, which were understood to be optimized also to maintain long-term stability as realistic production conditions. The resulting metal oxide single layers are characterized by their optical properties, dispersion curves for NUV and VIS as well as absorption and scatter at discrete wavelengths. Also discussed are mechanical properties like hardness and adherence. A test method is presented which clearly shows the superior behavior of the IAD coatings.
KW - Ion assisted deposition
KW - Low temperature deposition
KW - Optical constants
KW - Scatter
KW - Thin oxide films
UR - http://www.scopus.com/inward/record.url?scp=0031288519&partnerID=8YFLogxK
U2 - 10.1117/12.290194
DO - 10.1117/12.290194
M3 - Conference contribution
AN - SCOPUS:0031288519
SN - 0-8194-2555-9
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 205
EP - 213
BT - Optical Thin Films V: New Developments
PB - SPIE
CY - Bellingham
Y2 - 30 July 1997 through 1 August 1997
ER -