Details
| Original language | English |
|---|---|
| Title of host publication | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 2776-2778 |
| Number of pages | 3 |
| ISBN (electronic) | 9781538685297 |
| Publication status | Published - 26 Nov 2018 |
| Externally published | Yes |
| Event | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018 |
Abstract
The performance of III-V//Si tandem devices has successfully exceeded the theoretical efficiency limit of single junction Si devices (29.4%) yet the costs associated with these high-efficiency tandem devices are still too high to compete with today's conventional Si solar cells. Recent cost modeling efforts suggest that hydride vapor phase epitaxy (HVPE) could be adopted as an alternative growth technique to metal-organic chemical vapor deposition (MOCVD) because the costs of HVPE are substantially lower and the performance of devices fabricated from HVPE materials are continuously improving. This study reports on our first results of a HVPE-grown GaAs top cell mechanically stacked on a Si bottom cell.
Keywords
- HVPE, MOCVD, multi-junction solar cells, photovoltaic cells, Solar energy, tandems
ASJC Scopus subject areas
- Energy(all)
- Energy Engineering and Power Technology
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
Sustainable Development Goals
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2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 2776-2778 8547889.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - HVPE-Grown GaAs//Si Tandem Device Performance
AU - Vansant, Kaitlyn
AU - Simon, John
AU - Schnabel, Manuel
AU - Geisz, John
AU - Schulte, Kevin
AU - Ptak, Aaron
AU - Young, Michelle
AU - Guiling, David
AU - Olavarria, Waldo
AU - Rienaecker, Michael
AU - Schulte-Huxel, Henning
AU - Niepelt, Raphael
AU - Kajari-Schroeder, Sarah
AU - Brendel, Rolf
AU - Peibst, Robby
AU - Tamboli, Adele
N1 - Funding Information: We would like to thank Heike Kohlenberg at ISFH for his work performed in support of this publication. This work was authored in part by Alliance for Sustainable Energy, LLC, the manager and operator of the National Renewable Energy Laboratory for the U.S. Department of Energy (DOE) under Contract No. DE-AC36-08GO28308. Funding provided by the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Office under contract number DE-00030299. The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government. The U.S. Government retains and the publisher, by accepting the article for publication, acknowledges that the U.S. Government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this work, or allow others to do so, for U.S. Government purposes. Work at ISFH was supported by the German Federal Ministry for Economic Affairs and Energy within the framework of the EASi research project (FKZ0324040), the European Union’s Seventh Program for research, technological development and demonstration within the “HERCULES” project (grant agreement No 608498), and by the Ministry of Science and Culture of Lower Saxony. Publisher Copyright: © 2018 IEEE. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2018/11/26
Y1 - 2018/11/26
N2 - The performance of III-V//Si tandem devices has successfully exceeded the theoretical efficiency limit of single junction Si devices (29.4%) yet the costs associated with these high-efficiency tandem devices are still too high to compete with today's conventional Si solar cells. Recent cost modeling efforts suggest that hydride vapor phase epitaxy (HVPE) could be adopted as an alternative growth technique to metal-organic chemical vapor deposition (MOCVD) because the costs of HVPE are substantially lower and the performance of devices fabricated from HVPE materials are continuously improving. This study reports on our first results of a HVPE-grown GaAs top cell mechanically stacked on a Si bottom cell.
AB - The performance of III-V//Si tandem devices has successfully exceeded the theoretical efficiency limit of single junction Si devices (29.4%) yet the costs associated with these high-efficiency tandem devices are still too high to compete with today's conventional Si solar cells. Recent cost modeling efforts suggest that hydride vapor phase epitaxy (HVPE) could be adopted as an alternative growth technique to metal-organic chemical vapor deposition (MOCVD) because the costs of HVPE are substantially lower and the performance of devices fabricated from HVPE materials are continuously improving. This study reports on our first results of a HVPE-grown GaAs top cell mechanically stacked on a Si bottom cell.
KW - HVPE
KW - MOCVD
KW - multi-junction solar cells
KW - photovoltaic cells
KW - Solar energy
KW - tandems
UR - http://www.scopus.com/inward/record.url?scp=85059907962&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2018.8547889
DO - 10.1109/PVSC.2018.8547889
M3 - Conference contribution
AN - SCOPUS:85059907962
SP - 2776
EP - 2778
BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Y2 - 10 June 2018 through 15 June 2018
ER -