Hole-capture competition between a single quantum dot and an ionized acceptor

Research output: Contribution to journalArticleResearchpeer review

Authors

External Research Organisations

  • RAS - Ioffe Physico Technical Institute
View graph of relations

Details

Original languageEnglish
Article number125426
JournalPhysical Review B
Volume98
Issue number12
Publication statusPublished - 15 Sept 2018

Abstract

We study the competition of hole capture between an In(Ga)As quantum dot and a directly adjacent ionized impurity in view of spin-photon interfaces. The Kerr rotation noise spectroscopy at 4.2 K shows that the hole-capture probability of the In(Ga)As quantum dot is about one order of magnitude higher compared to the hole-capture probability of the ionized impurity and suggests that a simultaneous occupation of quantum dot and impurity by a hole is efficiently suppressed due to Coulomb interaction. A theoretical model of interconnected spin and charge noise allows the quantitative specification of all relevant time scales.

ASJC Scopus subject areas

Cite this

Hole-capture competition between a single quantum dot and an ionized acceptor. / Wiegand, J.; Smirnov, D. S.; Osberghaus, J. et al.
In: Physical Review B, Vol. 98, No. 12, 125426, 15.09.2018.

Research output: Contribution to journalArticleResearchpeer review

Wiegand J, Smirnov DS, Osberghaus J, Abaspour L, Hübner J, Oestreich M. Hole-capture competition between a single quantum dot and an ionized acceptor. Physical Review B. 2018 Sept 15;98(12):125426. doi: 10.48550/arXiv.1808.05574, 10.1103/PhysRevB.98.125426
Wiegand, J. ; Smirnov, D. S. ; Osberghaus, J. et al. / Hole-capture competition between a single quantum dot and an ionized acceptor. In: Physical Review B. 2018 ; Vol. 98, No. 12.
Download
@article{ef667ad243dd4b7882d8aa935eba91df,
title = "Hole-capture competition between a single quantum dot and an ionized acceptor",
abstract = "We study the competition of hole capture between an In(Ga)As quantum dot and a directly adjacent ionized impurity in view of spin-photon interfaces. The Kerr rotation noise spectroscopy at 4.2 K shows that the hole-capture probability of the In(Ga)As quantum dot is about one order of magnitude higher compared to the hole-capture probability of the ionized impurity and suggests that a simultaneous occupation of quantum dot and impurity by a hole is efficiently suppressed due to Coulomb interaction. A theoretical model of interconnected spin and charge noise allows the quantitative specification of all relevant time scales.",
author = "J. Wiegand and Smirnov, {D. S.} and J. Osberghaus and L. Abaspour and Jens H{\"u}bner and Michael Oestreich",
note = "Funding information: We thank K. Pierz (PTB) for providing the sample and M. M. Glazov (Ioffe Institute) for fruitful discussions. We acknowledge the financial support by the joint research project Q.com-H (BMBF 16KIS00107) and the German Science Foundation (DFG) (GRK 1991, OE 177/10-1). The theory was developed under partial support of the Basis Foundation and the Russian Science Foundation (Grant No. 14-12-01067). We thank K. Pierz (PTB) for providing the sample and M. M. Glazov (Ioffe Institute) for fruitful discussions. We acknowledge the financial support by the joint research project Q.com-H (BMBF 16KIS00107) and the German Science Foundation (DFG) (GRK 1991, OE 177/10-1). The theory was developed under partial support of the Basis Foundation and the Russian Science Foundation (Grant No. 14-12-01067).",
year = "2018",
month = sep,
day = "15",
doi = "10.48550/arXiv.1808.05574",
language = "English",
volume = "98",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Institute of Physics",
number = "12",

}

Download

TY - JOUR

T1 - Hole-capture competition between a single quantum dot and an ionized acceptor

AU - Wiegand, J.

AU - Smirnov, D. S.

AU - Osberghaus, J.

AU - Abaspour, L.

AU - Hübner, Jens

AU - Oestreich, Michael

N1 - Funding information: We thank K. Pierz (PTB) for providing the sample and M. M. Glazov (Ioffe Institute) for fruitful discussions. We acknowledge the financial support by the joint research project Q.com-H (BMBF 16KIS00107) and the German Science Foundation (DFG) (GRK 1991, OE 177/10-1). The theory was developed under partial support of the Basis Foundation and the Russian Science Foundation (Grant No. 14-12-01067). We thank K. Pierz (PTB) for providing the sample and M. M. Glazov (Ioffe Institute) for fruitful discussions. We acknowledge the financial support by the joint research project Q.com-H (BMBF 16KIS00107) and the German Science Foundation (DFG) (GRK 1991, OE 177/10-1). The theory was developed under partial support of the Basis Foundation and the Russian Science Foundation (Grant No. 14-12-01067).

PY - 2018/9/15

Y1 - 2018/9/15

N2 - We study the competition of hole capture between an In(Ga)As quantum dot and a directly adjacent ionized impurity in view of spin-photon interfaces. The Kerr rotation noise spectroscopy at 4.2 K shows that the hole-capture probability of the In(Ga)As quantum dot is about one order of magnitude higher compared to the hole-capture probability of the ionized impurity and suggests that a simultaneous occupation of quantum dot and impurity by a hole is efficiently suppressed due to Coulomb interaction. A theoretical model of interconnected spin and charge noise allows the quantitative specification of all relevant time scales.

AB - We study the competition of hole capture between an In(Ga)As quantum dot and a directly adjacent ionized impurity in view of spin-photon interfaces. The Kerr rotation noise spectroscopy at 4.2 K shows that the hole-capture probability of the In(Ga)As quantum dot is about one order of magnitude higher compared to the hole-capture probability of the ionized impurity and suggests that a simultaneous occupation of quantum dot and impurity by a hole is efficiently suppressed due to Coulomb interaction. A theoretical model of interconnected spin and charge noise allows the quantitative specification of all relevant time scales.

UR - http://www.scopus.com/inward/record.url?scp=85054489699&partnerID=8YFLogxK

U2 - 10.48550/arXiv.1808.05574

DO - 10.48550/arXiv.1808.05574

M3 - Article

AN - SCOPUS:85054489699

VL - 98

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 12

M1 - 125426

ER -

By the same author(s)