Details
| Original language | English |
|---|---|
| Pages (from-to) | 144-151 |
| Number of pages | 8 |
| Journal | Applied Surface Science |
| Volume | 397 |
| Early online date | 17 Nov 2016 |
| Publication status | Published - 1 Mar 2017 |
Abstract
The hole injection layer (HIL) with high work function (WF) is desirable to reduce the injection barrier between anode and hole transport layer in organic light emitting devices (OLED). Here, we report a novel approach to tune the WF of graphene oxide (GO) using oxygen and hydrogen plasma treatment and its hole injection properties in OLEDs. The mild exposure of oxygen plasma on GO (O 2 -GO) significantly reduces the injection barrier by increasing the WF of anode (4.98 eV) through expansion of C[sbnd]O bonds. In contrast, the hole injection barrier was drastically increased for hydrogen plasma treated GO (H 2 -GO) layers as the WF is lowered by the contraction of C[sbnd]O bond. By employing active O 2 -GO as HIL in OLEDs found to exhibit superior current efficiency of 4.2 cd/A as compared to 3.3 cd/A for pristine GO. Further, the high injection efficiency of O 2 -GO infused hole only device can be attributed to the improved energy level matching. Ultraviolet and X-ray photoelectron spectroscopy were used to correlate the WF of HIL infused anode towards the enhanced performance of OLEDs with their capricious content of C[sbnd]O in GO matrix.
Keywords
- Graphene oxide, Hole injection, Organic light emitting devices, Plasma treatments
ASJC Scopus subject areas
- Chemistry(all)
- General Chemistry
- Physics and Astronomy(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- General Physics and Astronomy
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
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In: Applied Surface Science, Vol. 397, 01.03.2017, p. 144-151.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Hole injection enhancement in organic light emitting devices using plasma treated graphene oxide
AU - Jesuraj, P. Justin
AU - Parameshwari, R.
AU - Kanthasamy, Karthiga
AU - Koch, Julian
AU - Pfnür, Herbert
AU - Jeganathan, K.
N1 - Funding information: KJ thanks Department of Science and Technology, Government of India under the contract no. DST/TSG/PT/2008/20 and DST/SR/NM/NS-1502/2014 for financial support. Authors sincerely thank Dr. Sujit dora, Application scientist, Keysight Technologies, Bangalore for KPFM studies. Author PJJ acknowledges Council of Scientific and Industrial Research (CSIR) for the award of senior research fellowship and also thanks Mr. N. Anbarasan & Mr. P. Dharmaraj for the scientific discussions.
PY - 2017/3/1
Y1 - 2017/3/1
N2 - The hole injection layer (HIL) with high work function (WF) is desirable to reduce the injection barrier between anode and hole transport layer in organic light emitting devices (OLED). Here, we report a novel approach to tune the WF of graphene oxide (GO) using oxygen and hydrogen plasma treatment and its hole injection properties in OLEDs. The mild exposure of oxygen plasma on GO (O 2 -GO) significantly reduces the injection barrier by increasing the WF of anode (4.98 eV) through expansion of C[sbnd]O bonds. In contrast, the hole injection barrier was drastically increased for hydrogen plasma treated GO (H 2 -GO) layers as the WF is lowered by the contraction of C[sbnd]O bond. By employing active O 2 -GO as HIL in OLEDs found to exhibit superior current efficiency of 4.2 cd/A as compared to 3.3 cd/A for pristine GO. Further, the high injection efficiency of O 2 -GO infused hole only device can be attributed to the improved energy level matching. Ultraviolet and X-ray photoelectron spectroscopy were used to correlate the WF of HIL infused anode towards the enhanced performance of OLEDs with their capricious content of C[sbnd]O in GO matrix.
AB - The hole injection layer (HIL) with high work function (WF) is desirable to reduce the injection barrier between anode and hole transport layer in organic light emitting devices (OLED). Here, we report a novel approach to tune the WF of graphene oxide (GO) using oxygen and hydrogen plasma treatment and its hole injection properties in OLEDs. The mild exposure of oxygen plasma on GO (O 2 -GO) significantly reduces the injection barrier by increasing the WF of anode (4.98 eV) through expansion of C[sbnd]O bonds. In contrast, the hole injection barrier was drastically increased for hydrogen plasma treated GO (H 2 -GO) layers as the WF is lowered by the contraction of C[sbnd]O bond. By employing active O 2 -GO as HIL in OLEDs found to exhibit superior current efficiency of 4.2 cd/A as compared to 3.3 cd/A for pristine GO. Further, the high injection efficiency of O 2 -GO infused hole only device can be attributed to the improved energy level matching. Ultraviolet and X-ray photoelectron spectroscopy were used to correlate the WF of HIL infused anode towards the enhanced performance of OLEDs with their capricious content of C[sbnd]O in GO matrix.
KW - Graphene oxide
KW - Hole injection
KW - Organic light emitting devices
KW - Plasma treatments
UR - http://www.scopus.com/inward/record.url?scp=84997771381&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2016.11.110
DO - 10.1016/j.apsusc.2016.11.110
M3 - Article
AN - SCOPUS:84997771381
VL - 397
SP - 144
EP - 151
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -