Details
| Original language | English |
|---|---|
| Pages (from-to) | 333-340 |
| Number of pages | 8 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 9 |
| Issue number | 5 |
| Publication status | Published - 17 Sept 2001 |
| Externally published | Yes |
Abstract
Low-temperature deposition of Si for thin-film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open-circuit voltage of these solar cells. In contrast, ion-assisted deposition produces Si films with a minority-carrier diffusion length of 40 μm, obtained at a record deposition rate of 0.8 μm/min and a deposition temperature of 650°C with a prebake at 810°C. A thin-film Si solar cell with a 20-μm-thick epitaxial layer achieves an open-circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high-temperature solar cell process steps.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: Progress in Photovoltaics: Research and Applications, Vol. 9, No. 5, 17.09.2001, p. 333-340.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells
AU - Oberbeck, Lars
AU - Schmidt, Jan
AU - Wagner, Thomas A.
AU - Bergmann, Ralf B.
PY - 2001/9/17
Y1 - 2001/9/17
N2 - Low-temperature deposition of Si for thin-film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open-circuit voltage of these solar cells. In contrast, ion-assisted deposition produces Si films with a minority-carrier diffusion length of 40 μm, obtained at a record deposition rate of 0.8 μm/min and a deposition temperature of 650°C with a prebake at 810°C. A thin-film Si solar cell with a 20-μm-thick epitaxial layer achieves an open-circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high-temperature solar cell process steps.
AB - Low-temperature deposition of Si for thin-film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open-circuit voltage of these solar cells. In contrast, ion-assisted deposition produces Si films with a minority-carrier diffusion length of 40 μm, obtained at a record deposition rate of 0.8 μm/min and a deposition temperature of 650°C with a prebake at 810°C. A thin-film Si solar cell with a 20-μm-thick epitaxial layer achieves an open-circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high-temperature solar cell process steps.
UR - http://www.scopus.com/inward/record.url?scp=0035446356&partnerID=8YFLogxK
U2 - 10.1002/pip.385
DO - 10.1002/pip.385
M3 - Article
AN - SCOPUS:0035446356
VL - 9
SP - 333
EP - 340
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 5
ER -