Highly efficient cw frequency doubling of 854 nm GaAlAs diode lasers in an external ring cavity

Research output: Contribution to journalArticleResearchpeer review

Authors

  • O. S. Brozek
  • V. Quetschke
  • A. Wicht
  • K. Danzmann

External Research Organisations

  • Max Planck Institute of Quantum Optics (MPQ)
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Details

Original languageEnglish
Pages (from-to)141-146
Number of pages6
JournalOptics communications
Volume146
Issue number1-6
Publication statusPublished - 15 Jan 1998

Abstract

We report on 50% conversion efficiency for frequency doubling of a 854 nm GaAlAs diode laser using a potassium niobate crystal in an external ring cavity. Frequency stabilization of the diode laser is achieved by direct optical feedback from the doubling cavity or from a grating in Littrow configuration. We determine 200 kHz linewidth from the measured spectral density of the frequency noise and from a beat signal measurement of two independent diode lasers. The blue output power of 7.8 mW shows rms-fluctuations of less than 0.6% in 1 MHz bandwidth.

Keywords

    Diode laser, Frequency doubling, Frequency noise, Intensity noise, Potassium niobate

ASJC Scopus subject areas

Cite this

Highly efficient cw frequency doubling of 854 nm GaAlAs diode lasers in an external ring cavity. / Brozek, O. S.; Quetschke, V.; Wicht, A. et al.
In: Optics communications, Vol. 146, No. 1-6, 15.01.1998, p. 141-146.

Research output: Contribution to journalArticleResearchpeer review

Brozek OS, Quetschke V, Wicht A, Danzmann K. Highly efficient cw frequency doubling of 854 nm GaAlAs diode lasers in an external ring cavity. Optics communications. 1998 Jan 15;146(1-6):141-146. doi: 10.1016/S0030-4018(97)00492-6
Brozek, O. S. ; Quetschke, V. ; Wicht, A. et al. / Highly efficient cw frequency doubling of 854 nm GaAlAs diode lasers in an external ring cavity. In: Optics communications. 1998 ; Vol. 146, No. 1-6. pp. 141-146.
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