Details
| Original language | English |
|---|---|
| Article number | 104006 |
| Journal | Semiconductor Science and Technology |
| Volume | 33 |
| Issue number | 10 |
| Publication status | Published - 26 Sept 2018 |
Abstract
Smooth and fully relaxed highly boron-doped germanium layers were grown directly on Si(001) substrates using carbon-mediated epitaxy. A doping level of NA 1.1 10 cm 20 -3 was measured by several methods. Using high-resolution x-ray diffraction we observed different lattice parameters for intrinsic and highly boron-doped samples. Alattice parameter of aGe:B = 5.653 A was calculated using the results obtained by reciprocal space mapping around the (113) reflection and the model of tetragonal distortion. The observed lattice contraction was adapted and brought in accordance with a theoretical model developed for ultra-highly boron-doped silicon. Raman spectroscopy was performed on the intrinsic and doped samples. A shift in the first order phonon scattering peak was observed and attributed to the high doping level. A doping level of (1.28+0.19) 1020 cm-3 was calculated by comparison with literature. We also observed a difference between the intrinsic and doped sample in the range of second order phonon scattering. Here, an intense peak is visible at 544.8 cm-1 for the doped samples. This peak was attributed to the bond between germanium and the boron isotope 11B.
Keywords
- carbon-mediated epitaxy, Fano effect, germanium on silicon, lattice contraction, Raman spectroscopy of germanium, ultra-high boron doping, x-ray diffraction
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Semiconductor Science and Technology, Vol. 33, No. 10, 104006, 26.09.2018.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy
AU - Barnscheidt, Yvo
AU - Schmidt, Jan
AU - Wetzel, Gustav
AU - Tetzlaff, Dominic
AU - Wietler, Tobias
AU - Osten, Hans-Jörg
N1 - © 2018 IOP Publishing Ltd
PY - 2018/9/26
Y1 - 2018/9/26
N2 - Smooth and fully relaxed highly boron-doped germanium layers were grown directly on Si(001) substrates using carbon-mediated epitaxy. A doping level of NA 1.1 10 cm 20 -3 was measured by several methods. Using high-resolution x-ray diffraction we observed different lattice parameters for intrinsic and highly boron-doped samples. Alattice parameter of aGe:B = 5.653 A was calculated using the results obtained by reciprocal space mapping around the (113) reflection and the model of tetragonal distortion. The observed lattice contraction was adapted and brought in accordance with a theoretical model developed for ultra-highly boron-doped silicon. Raman spectroscopy was performed on the intrinsic and doped samples. A shift in the first order phonon scattering peak was observed and attributed to the high doping level. A doping level of (1.28+0.19) 1020 cm-3 was calculated by comparison with literature. We also observed a difference between the intrinsic and doped sample in the range of second order phonon scattering. Here, an intense peak is visible at 544.8 cm-1 for the doped samples. This peak was attributed to the bond between germanium and the boron isotope 11B.
AB - Smooth and fully relaxed highly boron-doped germanium layers were grown directly on Si(001) substrates using carbon-mediated epitaxy. A doping level of NA 1.1 10 cm 20 -3 was measured by several methods. Using high-resolution x-ray diffraction we observed different lattice parameters for intrinsic and highly boron-doped samples. Alattice parameter of aGe:B = 5.653 A was calculated using the results obtained by reciprocal space mapping around the (113) reflection and the model of tetragonal distortion. The observed lattice contraction was adapted and brought in accordance with a theoretical model developed for ultra-highly boron-doped silicon. Raman spectroscopy was performed on the intrinsic and doped samples. A shift in the first order phonon scattering peak was observed and attributed to the high doping level. A doping level of (1.28+0.19) 1020 cm-3 was calculated by comparison with literature. We also observed a difference between the intrinsic and doped sample in the range of second order phonon scattering. Here, an intense peak is visible at 544.8 cm-1 for the doped samples. This peak was attributed to the bond between germanium and the boron isotope 11B.
KW - carbon-mediated epitaxy
KW - Fano effect
KW - germanium on silicon
KW - lattice contraction
KW - Raman spectroscopy of germanium
KW - ultra-high boron doping
KW - x-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=85054655709&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/aade69
DO - 10.1088/1361-6641/aade69
M3 - Article
AN - SCOPUS:85054655709
VL - 33
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 10
M1 - 104006
ER -