High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide

Research output: Contribution to journal › Article › Research › peer review

Authors

  • H. J. Osten
  • J. P. Liu
  • P. Gaworzewski
  • E. Bugiel
  • P. Zaumseil

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Pages (from-to)653-656
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 6 Aug 2002
Externally publishedYes

Abstract

The dielectric properties of praseodymium oxide films grown on Si(100) has been experimentally investigated. The crystalline film was found to exhibit an effective dielectric constant of 31, independent of the substrate doping type. Its electrical characteristics such as leakage current density, gate dielectric reliability, thermal stability and C-V characteristics have been discussed. Single crystal nature of the grown layers was confirmed by x-ray diffraction, cross-sectional transmission electron microscopy and electron diffraction.

ASJC Scopus subject areas

Cite this

High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide. / Osten, H. J.; Liu, J. P.; Gaworzewski, P. et al.
In: Technical Digest - International Electron Devices Meeting, 06.08.2002, p. 653-656.

Research output: Contribution to journal › Article › Research › peer review

Osten, HJ, Liu, JP, Gaworzewski, P, Bugiel, E & Zaumseil, P 2002, 'High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide', Technical Digest - International Electron Devices Meeting, pp. 653-656. https://doi.org/10.1109/IEDM.2000.904404
Osten, H. J., Liu, J. P., Gaworzewski, P., Bugiel, E., & Zaumseil, P. (2002). High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide. Technical Digest - International Electron Devices Meeting, 653-656. https://doi.org/10.1109/IEDM.2000.904404
Osten HJ, Liu JP, Gaworzewski P, Bugiel E, Zaumseil P. High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide. Technical Digest - International Electron Devices Meeting. 2002 Aug 6;653-656. doi: 10.1109/IEDM.2000.904404
Osten, H. J. ; Liu, J. P. ; Gaworzewski, P. et al. / High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide. In: Technical Digest - International Electron Devices Meeting. 2002 ; pp. 653-656.
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