Details
| Original language | English |
|---|---|
| Title of host publication | 56th ARFTG Conference Digest |
| Subtitle of host publication | Metrology and Test for RF Telecommunications, ARFTG 2000 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (electronic) | 0780356861, 9780780356863 |
| Publication status | Published - 2000 |
| Event | 56th ARFTG Conference Digest, ARFTG 2000 - Boulder, United States Duration: 30 Nov 2000 → 1 Dec 2000 |
Publication series
| Name | 56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000 |
|---|
Abstract
In this paper we apply a broadband measurement method to determine the propagation characteristics of coupled-line structures fabricated in different metallization layers of a 0.25 μm CMOS technology. We show that the matrices of frequency-dependent line parameters, as extracted from calibrated four-port S-parameter measurements, agree well with data predicted by numerical calculations, and discuss the impact of metal level height above the substrate on the transmission characteristics.
ASJC Scopus subject areas
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56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000. Institute of Electrical and Electronics Engineers Inc., 2000. 4120124 (56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - High-Frequency Behavior of Coupled CMOS Interconnects Built in Different Metallization Layers
AU - Arz, Uwe
AU - Williams, Dylan F.
AU - Walker, David K.
AU - Grabinski, Hartmut
PY - 2000
Y1 - 2000
N2 - In this paper we apply a broadband measurement method to determine the propagation characteristics of coupled-line structures fabricated in different metallization layers of a 0.25 μm CMOS technology. We show that the matrices of frequency-dependent line parameters, as extracted from calibrated four-port S-parameter measurements, agree well with data predicted by numerical calculations, and discuss the impact of metal level height above the substrate on the transmission characteristics.
AB - In this paper we apply a broadband measurement method to determine the propagation characteristics of coupled-line structures fabricated in different metallization layers of a 0.25 μm CMOS technology. We show that the matrices of frequency-dependent line parameters, as extracted from calibrated four-port S-parameter measurements, agree well with data predicted by numerical calculations, and discuss the impact of metal level height above the substrate on the transmission characteristics.
UR - http://www.scopus.com/inward/record.url?scp=84960380401&partnerID=8YFLogxK
U2 - 10.1109/ARFTG.2000.327425
DO - 10.1109/ARFTG.2000.327425
M3 - Conference contribution
AN - SCOPUS:84960380401
T3 - 56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000
BT - 56th ARFTG Conference Digest
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 56th ARFTG Conference Digest, ARFTG 2000
Y2 - 30 November 2000 through 1 December 2000
ER -