Details
| Original language | English |
|---|---|
| Article number | 6018975 |
| Pages (from-to) | 9-15 |
| Number of pages | 7 |
| Journal | IEEE journal of photovoltaics |
| Volume | 1 |
| Issue number | 1 |
| Publication status | Published - 2011 |
Abstract
Future low-cost Si photovoltaics shall combine the high-efficiency potential of ultrathin monocrystalline Si films with the low cost per area of the Si-thin-film photovoltaics. The literature describes various techniques for fabricating ultrathin monocrystalline Si films with no need for sawing wafers. Layer transfer using epitaxy on porous Si and subsequent layer separation is one option. We demonstrate an independently confirmed aperture efficiency of 19.1 for a 4-cm 2-sized layer transfer cell with a thickness of 43μm. This cell has a passivated emitter and rear contact structure with an Al 2O 3-surface passivation by atomic layer deposition and lasered contact openings. Highly efficient thin crystalline solar cells have to be integrated into modules. We also report on laser bonding of Si cells to a metalized carrier for module integration.
Keywords
- Aluminum oxide passivation, laser bonding, layer transfer, thin film/wafer hybrid
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE journal of photovoltaics, Vol. 1, No. 1, 6018975, 2011, p. 9-15.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - High-efficiency cells from layer transfer
T2 - A first step toward thin-film/wafer hybrid silicon technologies
AU - Brendel, Rolf
AU - Petermann, Jan Hendrik
AU - Zielke, Dimitri
AU - Schulte-Huxel, Henning
AU - Kessler, Michael
AU - Gatz, Sebastian
AU - Eidelloth, Stefan
AU - Bock, Robert
AU - Garralaga Rojas, Enrique
AU - Schmidt, Jan
AU - Dullweber, Thorsten
N1 - Funding Information: Manuscript received July 6, 2011; revised August 9, 2011 and August 12, 2011; accepted August 12, 2011. Date of publication September 15, 2011; date of current version October 27, 2011. This work was supported in part by the German Federal Ministry for the Environment, Nature Conservation, and Nuclear Safety in the framework of the CrystalLine project under Contract 0325192.
PY - 2011
Y1 - 2011
N2 - Future low-cost Si photovoltaics shall combine the high-efficiency potential of ultrathin monocrystalline Si films with the low cost per area of the Si-thin-film photovoltaics. The literature describes various techniques for fabricating ultrathin monocrystalline Si films with no need for sawing wafers. Layer transfer using epitaxy on porous Si and subsequent layer separation is one option. We demonstrate an independently confirmed aperture efficiency of 19.1 for a 4-cm 2-sized layer transfer cell with a thickness of 43μm. This cell has a passivated emitter and rear contact structure with an Al 2O 3-surface passivation by atomic layer deposition and lasered contact openings. Highly efficient thin crystalline solar cells have to be integrated into modules. We also report on laser bonding of Si cells to a metalized carrier for module integration.
AB - Future low-cost Si photovoltaics shall combine the high-efficiency potential of ultrathin monocrystalline Si films with the low cost per area of the Si-thin-film photovoltaics. The literature describes various techniques for fabricating ultrathin monocrystalline Si films with no need for sawing wafers. Layer transfer using epitaxy on porous Si and subsequent layer separation is one option. We demonstrate an independently confirmed aperture efficiency of 19.1 for a 4-cm 2-sized layer transfer cell with a thickness of 43μm. This cell has a passivated emitter and rear contact structure with an Al 2O 3-surface passivation by atomic layer deposition and lasered contact openings. Highly efficient thin crystalline solar cells have to be integrated into modules. We also report on laser bonding of Si cells to a metalized carrier for module integration.
KW - Aluminum oxide passivation
KW - laser bonding
KW - layer transfer
KW - thin film/wafer hybrid
UR - http://www.scopus.com/inward/record.url?scp=84865171078&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2011.2165529
DO - 10.1109/JPHOTOV.2011.2165529
M3 - Article
AN - SCOPUS:84865171078
VL - 1
SP - 9
EP - 15
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 1
M1 - 6018975
ER -