High speed laser structuring of crystalline silicon solar cells

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

  • S. Eidelloth
  • T. Neubert
  • T. Brendemühl
  • S. Hermann
  • P. Giesel
  • R. Brendel

External Research Organisations

  • Institute for Solar Energy Research (ISFH)
View graph of relations

Details

Original languageEnglish
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages2389-2394
Number of pages6
ISBN (electronic)9781424429509
Publication statusPublished - 2009
Externally publishedYes
Event34th IEEE Photovoltaic Specialists Conference (PVSC 2009) - Philadelphia, PA, United States
Duration: 7 Jun 200912 Jun 2009
Conference number: 34

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Abstract

Fast laser processing is commonly done using a Gaussian laser beam in combination with a scanner. Single laser pulses only affect a limited area beneath the Gaussian intensity bell and result in circular impact regions. Adjacent impact regions have to overlap when continuous processing larger areas. Thus, the processing speed is greatly enhanced by replacing the Gaussian profile with a flat-top intensity profile and by replacing the radial symmetric cross section with a rectangular cross section. However, processing with a rectangular flat-top laser beam through a scanner has, to the best of our knowledge, not yet been demonstrated. We report on the successful design and experimental tests of a new laser system that images a rectangular flat-top profile through a scanner. Our so-called Simultaneous Scanning and Laser Beam Imaging - system (SIMSALABIM) machines a finger pattern that covers 50 % of a (125 x 125) mm2 crystalline Si solar cell in 14 s. Two parallel systems with increased output power should process the same area in just 2.5 s.

ASJC Scopus subject areas

Cite this

High speed laser structuring of crystalline silicon solar cells. / Eidelloth, S.; Neubert, T.; Brendemühl, T. et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 2389-2394 5411310 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Eidelloth, S, Neubert, T, Brendemühl, T, Hermann, S, Giesel, P & Brendel, R 2009, High speed laser structuring of crystalline silicon solar cells. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411310, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2389-2394, 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), Philadelphia, PA, United States, 7 Jun 2009. https://doi.org/10.1109/PVSC.2009.5411310
Eidelloth, S., Neubert, T., Brendemühl, T., Hermann, S., Giesel, P., & Brendel, R. (2009). High speed laser structuring of crystalline silicon solar cells. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 2389-2394). Article 5411310 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411310
Eidelloth S, Neubert T, Brendemühl T, Hermann S, Giesel P, Brendel R. High speed laser structuring of crystalline silicon solar cells. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 2389-2394. 5411310. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2009.5411310
Eidelloth, S. ; Neubert, T. ; Brendemühl, T. et al. / High speed laser structuring of crystalline silicon solar cells. 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. pp. 2389-2394 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Download
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abstract = "Fast laser processing is commonly done using a Gaussian laser beam in combination with a scanner. Single laser pulses only affect a limited area beneath the Gaussian intensity bell and result in circular impact regions. Adjacent impact regions have to overlap when continuous processing larger areas. Thus, the processing speed is greatly enhanced by replacing the Gaussian profile with a flat-top intensity profile and by replacing the radial symmetric cross section with a rectangular cross section. However, processing with a rectangular flat-top laser beam through a scanner has, to the best of our knowledge, not yet been demonstrated. We report on the successful design and experimental tests of a new laser system that images a rectangular flat-top profile through a scanner. Our so-called Simultaneous Scanning and Laser Beam Imaging - system (SIMSALABIM) machines a finger pattern that covers 50 % of a (125 x 125) mm2 crystalline Si solar cell in 14 s. Two parallel systems with increased output power should process the same area in just 2.5 s.",
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note = "Funding Information: The financial support by the German ministry of BMU for the project LaserInvest (No. 0327547A) is gratefully acknowledged; 34th IEEE Photovoltaic Specialists Conference (PVSC 2009) ; Conference date: 07-06-2009 Through 12-06-2009",
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