Details
| Original language | English |
|---|---|
| Pages (from-to) | 272-275 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 22 |
| Issue number | 1-3 |
| Publication status | Published - 7 Feb 2004 |
| Event | 15th International Conference on ELectronic Propreties - Nara, Japan Duration: 14 Jul 2003 → 18 Jul 2003 |
Abstract
We present an experimental study of the AC conductance GAC of an atomic force microscope engraved quantum point contact at high frequency f=160 MHz. In agreement with theoretical predictions the real part R(GAC) is unchanged from the DC-conductance GDC. The imaginary part I(G AC) changes for every addition of a new conductance channel.
Keywords
- AFM lithography, High frequency conductance, Quantum point contact
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 22, No. 1-3, 07.02.2004, p. 272-275.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - High frequency conductance of a quantum point contact
AU - Regul, J.
AU - Hohls, F.
AU - Reuter, D.
AU - Wieck, A. D.
AU - Haug, R. J.
N1 - Funding information: We thank Ulrich Keyser for the AFM lithography and the AFM picture and we acknowledge financial support by the BMBF and the DFG.
PY - 2004/2/7
Y1 - 2004/2/7
N2 - We present an experimental study of the AC conductance GAC of an atomic force microscope engraved quantum point contact at high frequency f=160 MHz. In agreement with theoretical predictions the real part R(GAC) is unchanged from the DC-conductance GDC. The imaginary part I(G AC) changes for every addition of a new conductance channel.
AB - We present an experimental study of the AC conductance GAC of an atomic force microscope engraved quantum point contact at high frequency f=160 MHz. In agreement with theoretical predictions the real part R(GAC) is unchanged from the DC-conductance GDC. The imaginary part I(G AC) changes for every addition of a new conductance channel.
KW - AFM lithography
KW - High frequency conductance
KW - Quantum point contact
UR - http://www.scopus.com/inward/record.url?scp=1842785392&partnerID=8YFLogxK
U2 - 10.1016/j.physe.2003.11.266
DO - 10.1016/j.physe.2003.11.266
M3 - Conference article
AN - SCOPUS:1842785392
VL - 22
SP - 272
EP - 275
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-3
T2 - 15th International Conference on ELectronic Propreties
Y2 - 14 July 2003 through 18 July 2003
ER -