Details
| Original language | English |
|---|---|
| Article number | 6029955 |
| Pages (from-to) | 49-53 |
| Number of pages | 5 |
| Journal | IEEE journal of photovoltaics |
| Volume | 1 |
| Issue number | 1 |
| Publication status | Published - Jul 2011 |
Abstract
In the ALBA-II project, Q-Cells SE, Bitterfeld-Wolfen, Germany, and the Institute for Solar Energy Research Hamelin, Emmerthal, Germany, are developing high-efficiency emitter-wrap-through (EWT) solar cells on n-type silicon wafers. N-type silicon grown by the Czochralski (Cz) method forms the basis of this high-efficiency solar cell development as it offers high bulk carrier lifetimes. The EWT device structure allows us to employ a simplified process sequence compared with interdigitated back-contact back-junction solar cells. High open-circuit voltages of our solar cells are achieved by different passivation layers for base and emitter surfaces and picosecond laser ablated contact openings. An optimization of the resistances along the current paths in base and emitter leads to an improvement in fill factor (FF) over former EWT solar cells. Together with the inherently high current densities of EWT solar cells, we achieve on our small-area (4-cm 2, designated area without busbars) cells a short-circuit current density JSC of 40.4mA/cm 2, an open-circuit voltage VOC of 661 mV, FFs well above 80%, and, thus, cell efficiencies of up to 21.6%.
Keywords
- Emitter-wrap-through (EWT), n-type silicon, silicon solar cells
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE journal of photovoltaics, Vol. 1, No. 1, 6029955, 07.2011, p. 49-53.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - High Efficiency N-Type Emitter-Wrap-Through Silicon Solar Cells
AU - Kiefer, Fabian
AU - Ulzhöfer, Christian
AU - Brendemühl, Till
AU - Harder, Nils Peter
AU - Brendel, Rolf
AU - Mertens, Verena
AU - Bordihn, Stefan
AU - Peters, Christina
AU - Müller, Jörg W.
PY - 2011/7
Y1 - 2011/7
N2 - In the ALBA-II project, Q-Cells SE, Bitterfeld-Wolfen, Germany, and the Institute for Solar Energy Research Hamelin, Emmerthal, Germany, are developing high-efficiency emitter-wrap-through (EWT) solar cells on n-type silicon wafers. N-type silicon grown by the Czochralski (Cz) method forms the basis of this high-efficiency solar cell development as it offers high bulk carrier lifetimes. The EWT device structure allows us to employ a simplified process sequence compared with interdigitated back-contact back-junction solar cells. High open-circuit voltages of our solar cells are achieved by different passivation layers for base and emitter surfaces and picosecond laser ablated contact openings. An optimization of the resistances along the current paths in base and emitter leads to an improvement in fill factor (FF) over former EWT solar cells. Together with the inherently high current densities of EWT solar cells, we achieve on our small-area (4-cm 2, designated area without busbars) cells a short-circuit current density JSC of 40.4mA/cm 2, an open-circuit voltage VOC of 661 mV, FFs well above 80%, and, thus, cell efficiencies of up to 21.6%.
AB - In the ALBA-II project, Q-Cells SE, Bitterfeld-Wolfen, Germany, and the Institute for Solar Energy Research Hamelin, Emmerthal, Germany, are developing high-efficiency emitter-wrap-through (EWT) solar cells on n-type silicon wafers. N-type silicon grown by the Czochralski (Cz) method forms the basis of this high-efficiency solar cell development as it offers high bulk carrier lifetimes. The EWT device structure allows us to employ a simplified process sequence compared with interdigitated back-contact back-junction solar cells. High open-circuit voltages of our solar cells are achieved by different passivation layers for base and emitter surfaces and picosecond laser ablated contact openings. An optimization of the resistances along the current paths in base and emitter leads to an improvement in fill factor (FF) over former EWT solar cells. Together with the inherently high current densities of EWT solar cells, we achieve on our small-area (4-cm 2, designated area without busbars) cells a short-circuit current density JSC of 40.4mA/cm 2, an open-circuit voltage VOC of 661 mV, FFs well above 80%, and, thus, cell efficiencies of up to 21.6%.
KW - Emitter-wrap-through (EWT)
KW - n-type silicon
KW - silicon solar cells
UR - http://www.scopus.com/inward/record.url?scp=84865174266&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2011.2164953
DO - 10.1109/JPHOTOV.2011.2164953
M3 - Article
AN - SCOPUS:84865174266
VL - 1
SP - 49
EP - 53
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 1
M1 - 6029955
ER -