Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Caspar Hopfmann
  • Nand Lal Sharma
  • Weijie Nie
  • Robert Keil
  • Fei Ding
  • Oliver G. Schmidt

Research Organisations

External Research Organisations

  • Leibniz Institute for Solid State and Materials Research Dresden (IFW)
  • Chemnitz University of Technology (CUT)
  • Technische Universität Dresden
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Details

Original languageEnglish
Article number075301
Number of pages12
JournalPhysical Review B
Volume104
Issue number7
Early online date5 Aug 2021
Publication statusPublished - 15 Aug 2021

Abstract

We present a comprehensive study on heralded spin preparation employing excited state resonances of droplet-etched GaAs quantum dots. This achievement will facilitate future investigations of spin qubit based quantum memories using the GaAs quantum dot material platform. By observation of excitation spectra for a range of fundamental excitonic transitions, the properties of different quantum dot energy levels, i.e., shells, are revealed. The innovative use of polarization-resolved excitation and detection in the context of quasiresonant excitation spectroscopy of quantum dots greatly simplifies the determination of the spin preparation fidelities - irrespective of the relative orientations of laboratory and quantum dot polarization eigenbases. By employing this method, spin preparation fidelities of quantum dot ground states of up to 85% are found. Additionally, the characteristic nonradiative decay time is investigated as a function of ground state, excitation resonance, and excitation power level, yielding decay times as low as 29 ps for s-p shell exited state transitions. Finally, by time-resolved correlation spectroscopy it is demonstrated that the employed excitation scheme has a significant impact on the electronic environment of quantum dot transitions and their apparent brightness.

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Cite this

Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation. / Hopfmann, Caspar; Sharma, Nand Lal; Nie, Weijie et al.
In: Physical Review B, Vol. 104, No. 7, 075301, 15.08.2021.

Research output: Contribution to journalArticleResearchpeer review

Hopfmann C, Sharma NL, Nie W, Keil R, Ding F, Schmidt OG. Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation. Physical Review B. 2021 Aug 15;104(7):075301. Epub 2021 Aug 5. doi: 10.1103/physrevb.104.075301
Hopfmann, Caspar ; Sharma, Nand Lal ; Nie, Weijie et al. / Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation. In: Physical Review B. 2021 ; Vol. 104, No. 7.
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abstract = "We present a comprehensive study on heralded spin preparation employing excited state resonances of droplet-etched GaAs quantum dots. This achievement will facilitate future investigations of spin qubit based quantum memories using the GaAs quantum dot material platform. By observation of excitation spectra for a range of fundamental excitonic transitions, the properties of different quantum dot energy levels, i.e., shells, are revealed. The innovative use of polarization-resolved excitation and detection in the context of quasiresonant excitation spectroscopy of quantum dots greatly simplifies the determination of the spin preparation fidelities - irrespective of the relative orientations of laboratory and quantum dot polarization eigenbases. By employing this method, spin preparation fidelities of quantum dot ground states of up to 85% are found. Additionally, the characteristic nonradiative decay time is investigated as a function of ground state, excitation resonance, and excitation power level, yielding decay times as low as 29 ps for s-p shell exited state transitions. Finally, by time-resolved correlation spectroscopy it is demonstrated that the employed excitation scheme has a significant impact on the electronic environment of quantum dot transitions and their apparent brightness.",
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AU - Keil, Robert

AU - Ding, Fei

AU - Schmidt, Oliver G.

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N2 - We present a comprehensive study on heralded spin preparation employing excited state resonances of droplet-etched GaAs quantum dots. This achievement will facilitate future investigations of spin qubit based quantum memories using the GaAs quantum dot material platform. By observation of excitation spectra for a range of fundamental excitonic transitions, the properties of different quantum dot energy levels, i.e., shells, are revealed. The innovative use of polarization-resolved excitation and detection in the context of quasiresonant excitation spectroscopy of quantum dots greatly simplifies the determination of the spin preparation fidelities - irrespective of the relative orientations of laboratory and quantum dot polarization eigenbases. By employing this method, spin preparation fidelities of quantum dot ground states of up to 85% are found. Additionally, the characteristic nonradiative decay time is investigated as a function of ground state, excitation resonance, and excitation power level, yielding decay times as low as 29 ps for s-p shell exited state transitions. Finally, by time-resolved correlation spectroscopy it is demonstrated that the employed excitation scheme has a significant impact on the electronic environment of quantum dot transitions and their apparent brightness.

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